MRF20030 ,RF POWER TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF20030/DThe RF Sub–Micron Bipolar Line* ** * ..
MRF20060 ,RF POWER BROADBAND NPN BIPOLARMAXIMUM RATINGSRating Symbol Value UnitCollector–Emitter Voltage (I = 0 mA) V 25 VdcB CEOCollector– ..
MRF20060 ,RF POWER BROADBAND NPN BIPOLAR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF20060/DThe RF Sub–Micron Bipolar Line** ** * ..
MRF21010 ,MRF21010R1, MRF21010LSR1 2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF21010/DThe RF MOSFET Line ..
MRF21010LSR1 ,2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET
MRF21030 ,MRF21030R3, MRF21030LR3, MRF21030SR3, MRF21030LSR3 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 2.1 °C/ ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MRF20030
RF POWER TRANSISTOR
The RF Sub–Micron Bipolar Line -
Designed for broadband commercial and industrial applications at frequen-
cies from 1800 to 2000 MHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common–emitter class A and class AB
amplifier applications. Suitable for frequency modulated, amplitude modulated
and multi–carrier base station RF power amplifiers. Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
Output Power — 30 Watts (PEP)
Power Gain — 9.8 dB
Efficiency — 34%
Intermodulation Distortion — –28 dBc Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics
Output Power — 30 Watts
Power Gain — 10.5 dB
Efficiency — 40% Excellent Thermal Stability Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP)
Output Power Characterized with Series Equivalent Large–Signal Impedance Parameters S–Parameter Characterization at High Bias Levels Designed for FM, TDMA, CDMA, and Multi–Carrier Applications
MAXIMUM RATINGS
THERMAL CHARACTERISTICS(1) Thermal resistance is determined under specified RF operating condition.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS
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by MRF20030/D-
SEMICONDUCTOR TECHNICAL DATA
