MRF1946A ,RF POWER TRANSISTORS NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF20030 ,RF POWER TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF20030/DThe RF Sub–Micron Bipolar Line* ** * ..
MRF20060 ,RF POWER BROADBAND NPN BIPOLARMAXIMUM RATINGSRating Symbol Value UnitCollector–Emitter Voltage (I = 0 mA) V 25 VdcB CEOCollector– ..
MRF20060 ,RF POWER BROADBAND NPN BIPOLAR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF20060/DThe RF Sub–Micron Bipolar Line** ** * ..
MRF21010 ,MRF21010R1, MRF21010LSR1 2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF21010/DThe RF MOSFET Line ..
MRF21010LSR1 ,2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MRF1946A
RF POWER TRANSISTORS NPN SILICON
The RF Line--.. designed for 12.5 volt large–signal power amplifiers in commercial and
industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance
Output Power = 30 Watts
Power Gain = 10 dB
Efficiency = 60% Diffused Emitter Resistor Ballasting Characterized to 220 MHz Load Mismatch at High Line and Overdrive Conditions
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
ON CHARACTERISTICS(continued)
