MRF19120 ,MRF19120, MRF19120S 1990 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF19125 ,MRF19125, MRF19125S, MRF19125SR3 1990 MHz, 125 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.53 °C ..
MRF19125S ,RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF1946A ,RF POWER TRANSISTORS NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF20030 ,RF POWER TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF20030/DThe RF Sub–Micron Bipolar Line* ** * ..
MRF20060 ,RF POWER BROADBAND NPN BIPOLARMAXIMUM RATINGSRating Symbol Value UnitCollector–Emitter Voltage (I = 0 mA) V 25 VdcB CEOCollector– ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MRF19120
MRF19120, MRF19120S 1990 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs
The RF Sub–Micron MOSFET Line�� ����� ����� ������ � ����������
N–Channel Enhancement–Mode Lateral MOSFETsDesigned for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. CDMA Performance @ 1990 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — –47 dBc @ 30 kHz BW
1.25 MHz — –55 dBc @ 12.5 kHz BW
2.25 MHz — –55 dBc @ 1 MHz BW
Output Power — 15 Watts (Avg.)
Power Gain — 11.7 dB
Efficiency — 16% Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency, High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 120 Watts (CW)
Output Power S–Parameter Characterization at High Bias Levels Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
