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MRF187 ,RF POWER FIELD EFFECT TRANSISTORSOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF187/DThe RF MOSFET Line ..
MRF19030 ,MRF19030R3, MRF19030SR3 2.0 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF19030/DThe RF MOSFET Line ..
MRF19030LSR3 , The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045 ,MRF19045R3, MRF19045SR3 1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF19045/DThe RF MOSFET Line ..
MRF19045 ,MRF19045R3, MRF19045SR3 1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 1.65 °C ..
MRF19060 ,MRF19060, MRF19060R3, MRF19060SR3 1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.97 °C ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MRF187
RF POWER FIELD EFFECT TRANSISTORS
LIFETIME BUY
LAST ORDER 31JUL04
LAST SHIP
31JAN05
The RF MOSFET Line�� ����� ����� ������ � ����������
N–Channel Enhancement–Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications with
frequencies up to 1.0 GHz. The high gain and broadband performance of
these devices make them ideal for large–signal, common source amplifier
applications in 26 volt base station equipment. Guaranteed Performance @ 880 MHz, 26 Volts
Output Power — 85 Watts PEP
Power Gain — 12 dB
Efficiency — 30%
Intermodulation Distortion — –28 dBc 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, 880 MHz, 85 Watts CW Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS