MRF183 ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF183/DThe RF MOSFET Line** * * ** **N–Channel ..
MRF183 ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSDrain–Gate Voltage (RGS = 1 ..
MRF183 ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 1.5 °C/ ..
MRF184 ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 1.1 °C/ ..
MRF184S ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF185 ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFET**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF185/D* **The RF MOSFET Line** ** *85 WATTS, ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MRF183
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
The RF MOSFET Line- --
N–Channel Enhancement–Mode Lateral
MOSFETsDesigned for broadband commercial and industrial applications at frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
makes ithem ideal for large–signal, common source amplifier applications in 28
volt base station equipment. Guaranteed Performance at 945 MHz, 28 Volts
Output Power – 45 Watts PEP
Power Gain – 11.5 dB
Efficiency – 33%
IMD – 28 dBc Characterized with Series Equivalent Large–Signal
Impedance Parameters S–Parameter Characterization at High Bias Levels Excellent Thermal Stability 100% Tested for Load Mismatch Stress at all Phase Angles
with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Order this document
by MRF183/D-
SEMICONDUCTOR TECHNICAL DATA
