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MRF1535T1MOTN/a2avaiMRF1535T1, MRF1535FT1 520 MHz, 35 W, 12.5 V Lateral N-Channel RF Power MOSFETs


MRF1535T1 ,MRF1535T1, MRF1535FT1 520 MHz, 35 W, 12.5 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1535T1/DThe RF MOSFET Line    ..
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MRF1535T1
MRF1535T1, MRF1535FT1 520 MHz, 35 W, 12.5 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line
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N–Channel Enhancement–Mode Lateral MOSFET

The MRF1535T1 is designed for broadband commercial and industrial
applications with frequencies to 520 MHz. The high gain and broadband
performance of this device make it ideal for large–signal, common source
amplifier applications in 12.5 volt mobile FM equipment. Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 35 Watts
Power Gain — 10.0 dB
Efficiency — 50% Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Broadband–Full Power Across the Band: 135–175 MHz
400–470 MHz
450–520 MHz Broadband UHF/VHF Demonstration Amplifier Information Available
Upon Request RF Power Plastic Surface Mount Package Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS

(1) Calculated based on the formula PD =
TJ–TC
RθJC
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