MRF15030 ,RF POWER TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF15030/DThe RF Line ** *Designed for 26 volt ..
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MRF15090 ,RF POWER TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF15090/D* **The RF Line** ** *Designed for 2 ..
MRF1511N , RF Power Field Effect Transistor
MRF1511N , RF Power Field Effect Transistor
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MT28F004B5 , FLASH MEMORY
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MRF15030
RF POWER TRANSISTOR
The RF Line- -
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400–1600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics:
Output Power — 30 Watts
Gain — 9 dB Min @ 30 Watts (PEP)
Efficiency — 30% Min @ 30 Watts (PEP)
Intermodulation Distortion — –30 dBc Max @ 30 Watts (PEP) Third Order Intercept Point — 53.5 dBm Typ @ 1490 MHz,
VCE = 24 Vdc, IC = 2.5 Adc Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz Characterized with Small Signal S–Parameters from 1000–2000 MHz Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at all Phase Angles with
3:1 Load VSWR @ 28 Vdc, at Rated Output Power Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
OFF CHARACTERISTICS(continued)
Order this document
by MRF15030/D-
SEMICONDUCTOR TECHNICAL DATA
