MPX2050DP ,50 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensorsblock diagram of the internal circuitry on the stand–alone pressureCASE 344Bsensor chip.)& ' ! ..
MPX2053GP ,Sensorblock diagram of the internalcircuitry on the stand–alone pressure sensor chip.+(MPX2053GPCASE 344 ..
MPX2100A ,Compensated Pressure Sensor**Order this documentSEMICONDUCTOR TECHNICAL DATAby MPX2100/D** * * *"# * *Motorola Preferred Devi ..
MPX2100AP ,SensorFeatures• Temperature Compensated Over 0°C to +85°C• Unique Silicon Shear Stress Strain Gauge• Easy ..
MPX2100ASX ,Sensorblock diagram of the internal circuitry on the stand–alonepressure sensor chip.DIFFERENTIALVS PORT ..
MPX2100D ,Compensated Pressure SensorFeatures• Temperature Compensated Over 0°C to +85°C• Unique Silicon Shear Stress Strain Gauge• Easy ..
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MPX2050DP
50 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors
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The MPX2050 series device is a silicon piezoresistive pressure sensors providing a
highly accurate and linear voltage output — directly proportional to the applied pressure.
The sensor is a single, monolithic silicon diaphragm with the strain gauge and a thin–film
resistor network integrated on–chip. The chip is laser trimmed for precise span and offset
calibration and temperature compensation.
Features Temperature Compensated Over 0°C to +85°C Unique Silicon Shear Stress Strain Gauge Easy to Use Chip Carrier Package Options Ratiometric to Supply Voltage Differential and Gauge Options
•±0.25% Linearity (MPX2050)
Application Examples Pump/Motor Controllers Robotics Level Indicators Medical Diagnostics Pressure Switching Non–Invasive Blood Pressure Measurement
Figure 1 shows a block diagram of the internal circuitry on the stand–alone pressure
sensor chip.
Figure 1. Temperature Compensated Pressure Sensor Schematic)243�
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VOLTAGE OUTPUT versus APPLIED DIFFERENTIAL PRESSUREThe differential voltage output of the sensor is directly proportional to the differential
pressure applied.
The output voltage of the differential or gauge sensor increases with increasing
pressure applied to the pressure side (P1) relative to the vacuum side (P2). Similarly,
output voltage increases as increasing vacuum is applied to the vacuum side (P2)
relative to the pressure side (P1).
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SEMICONDUCTOR TECHNICAL DATA
