MPSH81 ,PNP RF Transistorapplications involving pulsed or low duty cycle operations.3) All voltages (V) and currents (A) are ..
MPSH81 ,PNP RF Transistorapplications to 250 mHz with collector currents in the 1.0 mAto 30 mA range. Sourced from Process 7 ..
MPSL01 ,NPN General Purpose Amplifier3V , COLLECTOR−EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAINCEFEI , COLLECTOR CURRENT (A)μCMPSL ..
MPSL01 ,NPN General Purpose AmplifierMPSL01Discrete POWER & SignalTechnologiesMPSL01TO-92CBENPN General Purpose AmplifierThis device is ..
MPSL01 ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
MPSL01 ,NPN General Purpose AmplifierMPSL01Discrete POWER & SignalTechnologiesMPSL01TO-92CBENPN General Purpose AmplifierThis device is ..
MST4411CK ,High Efficiency Red 0.52 inch (13.2 mm) Three Digit Stick DisplayFEATURES
Easy to read digits.
8' 7.00 (0.28) 3 digit common anode or cathode.
5.80(0.23) "l r Lo ..
MST4911C ,0.4 INCH (10.2MM) THREE DIGIT STICK DISPLAYFEATURES
Easy to read digits.
8' 7.00 (0.28) 3 digit common anode or cathode.
5.80(0.23) "l r Lo ..
MST4941C ,0.4 INCH (10.2MM) THREE DIGIT STICK DISPLAYFEATURES
Easy to read digits.
8' 7.00 (0.28) 3 digit common anode or cathode.
5.80(0.23) "l r Lo ..
MSU2964 , 8-Bit Micro-controller
MSV-0505 , 1 AND 2 WATT DC//DC CONVERTERS SIINGLE & MULTIIPLE OUTPUTS
MT1230 , RF SILICON AND SUBSYSTEMS SOLUTIONS FOR BROADBAND COMMUNICATIONS AND AUTOMOTIVE ELECTRONICS
MPSH81
PNP RF Transistor
MPSH81 / MMBTH81 MPSH81 MMBTH81 C E TO-92 C B E SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 20 V CEO V Collector-Base Voltage 20 V CBO V Emitter-Base Voltage 3.0 V EBO I Collector Current - Continuous 50 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MPSH81 *MMBTH81 P Total Device Dissipation 350 225 mW D Derate above 25 C 2.8 1.8 mW/ C ° ° Thermal Resistance, Junction to Case 125 R °C/W θJC R Thermal Resistance, Junction to Ambient 357 556 C/W θ ° JA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997
