MPSA77 ,Leaded Small Signal Transistor Darlingtonapplications requiring extremely high current gain at currents to 800mA. Sourced from process 61.T ..
MPSA77 ,Leaded Small Signal Transistor DarlingtonELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MPSA77 ,Leaded Small Signal Transistor Darlington2|h |, HIGH FREQUENCY CURRENT GAIN V, VOLTAGE (VOLTS)FEh , DC CURRENT GAIN (X1.0 K)FEI , COLLECTOR ..
MPSA92 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
MPSA92G , High Voltage Transistors
MPSA92RLRA ,Small Signal High Voltage PNPTHERMAL CHARACTERISTICS1YWW2Characteristic Symbol Max Unit 3TO−92Thermal Resistance, R 200 °C/WJAC ..
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MSS5131-103MLC , Shielded Power Inductors - MSS5131
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MPSA77
PNP Darlington Transistor
MPSA77 MPSA77 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800mA. Sourced from process 61. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage -60 V CES V Collector-Base Voltage -60 V CBO V Emitter-Base Voltage -10 V EBO I Collector Current - Continuous -1.2 A C T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage I = -100μA, I = 0 -60 V (BR)CES C B I Collector Cutoff Current V = -30V, I = 0 -100 nA CBO CB E I Emitter Cutoff Current V = -10V, I = 0 -100 nA EBO EB C On Characteristics * h DC Current Gain I = -10mA, V = -5.0V 10,000 FE C CE I = -100mA, V = -5.0V 10,000 C CE V (sat) Collector-Emitter Saturation Voltage I = -100mA, I = -0.1mA -1.5 V CE C B V (on) Base-Emitter On Voltage I = -100mA, V = -5.0mA -2.0 V BE C CE Small Signal Characteristics * f Current Gain Dandwidth Product I = -10mA, V = -5.0V 100 MHz T C CE f = 100MHz * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 °C/W θJA ©2003 Rev. A, October 2003
