MPSA20 ,NPN General Purpose AmplifierFeatures• BVceo .....40V(Min)• hFE ...... 40~400 @ Vce=10V, Ic=5mA•Pb free• Sourced from process 10 ..
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MPSA20
NPN General Purpose Amplifier
MPSA20 — NPN General Purpose Amplifier February 2009 MPSA20 NPN General Purpose Amplifier Features • BVceo .....40V(Min) • hFE ...... 40~400 @ Vce=10V, Ic=5mA •Pb free • Sourced from process 10 Absolute Maximum Ratings T = 25°C unless otherwise noted a Symbol Parameter Value Unit V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 4 V EBO I Collector Current 100 mA C T Junction Temperature 150 °C J T Storage Temperature Range -55 ~ 150 °C STG * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* T =25°C unless otherwise noted a Symbol Parameter Max Unit P Collector Power Dissipation, by R 625 mW C θJA R Thermal Resistance, Junction to Case 125 °C/W θJC R Thermal Resistance, Junction to Ambient 200 °C/W θJA * 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150 degrees C. 4. Device mounted on FR-4 PCB 36mm * 1.5mm: Mounting pad for the collector lead min.6cm. Electrical Characteristics* T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Unit BV Collector-Emitter Breakdown Voltage I = 1mA, I = 0 40 V CEO C B BV Emitter-Base Breakdown Voltage I = 100μA, I = 0 4 V EBO E C I Collector Cut-off Current V = 30V 100 nA CBO CB h DC Current Gain V = 10V, I = 5mA 40 400 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 10mA, I = 1mA 0.25 V CE C B V (on) Base-Emitter On Voltage V = -10V, I = -10mA -0.5 -1.2 V BE CE C C Output Capacitance V = 10V, f = 100kHz 4.0 pF cb CB f Current Gain Bandwithd Product V = 10V, I = 5mA, f = 100MHz 125 Mhz T CE C * DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2% © 2007 MPSA20 Rev. 1.0.0 1
