MPSA05RA ,NPN Medium Power Transistorapplications at collector currents to 300mA.• Sourced from process 10.2SOT-23TO-92 1Mark: 1H11. Emi ..
MPSA05RLRA ,Small Signal General Purpose NPNELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
MPSA06 ,Leaded Small Signal Transistor General Purposeapplicationsat collector currents to 300 mA. Sourced from Process 33.Absolute Maximum Ratings* ..
MPSA06G , Amplifier Transistors
MPSA06RLRA , Amplifier Transistors
MPSA06RLRAG , Amplifier Transistors
MSP-EXP430G2 , Starter Kit Evaluation Kit Manual
MSQ6411C ,0.56 INCH (14.2MM) FOUR DIGIT STICK DISPLAY0.56 INCH (14.2 MM)
FOUR DIGIT STICK DISPLAY
BRIGHT RED MSQS111C, MSQG141C
GREEN MSQ6411C, M ..
MSQ6441C ,0.56 INCH (14.2MM) FOUR DIGIT STICK DISPLAY0.56 INCH (14.2 MM)
FOUR DIGIT STICK DISPLAY
BRIGHT RED MSQS111C, MSQG141C
GREEN MSQ6411C, M ..
MSQA6V1W5 ,Quad Array for ESD Protection2P , PEAK SURGE POWER (WATTS)pk% OF PEAK PULSE CURRENTMSQA6V1W5T210010090908080707060 6050 50404030 ..
MSQA6V1W5T2 ,Quad Array for ESD ProtectionFeatures61• SC88A Package Allows Four Separate Unidirectional ConfigurationsSC−88A/SOT−323• Low Lea ..
MSQC4411C ,0.4 Inch (10.2mm) 4 Digit CLOCK STICK DISPLAYFEATURESBright Bold SegmentsCommon Anode/CathodeLow Power ConsumptionLow Current CapabilityNeu ..
MPSA05RA
NPN Medium Power Transistor
MPSA05/MMBTA05 MPSA05/MMBTA05 NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from process 10. 2 SOT-23 TO-92 1 Mark: 1H 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 60 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 4.0 V EBO I Collector current - Continuous 500 mA C T , T Junction and Storage Temperature -55 ~ +150 °C J stg Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 1mA, I = 0 60 V (BR)CEO C B V Emitter-Base Breakdown Voltage I = 100μA, I = 0 4 V (BR)EBO C C I Collector Cutoff Current V = 60V, I = 0 0.1 μA CEO CE B I Emitter Cutoff Current V = 60V, I = 0 0.1 μA CBO CB E On Characteristics h DC Current Gain I = 10mA, V = 1.0V 100 FE C CE I = 100mA, V = 1.0V 100 C CE V Collector-Emitter Saturation Voltage I = 100mA, I = 10mA 0.25 V CE(sat) C B V Base-Emitter On Voltage I = 100mA, V = 1.0V 1.2 V BE(on) C CE Small Signal Characteristics f Current Gain Bandwidth Product I = 10mA, V = 2V, 100 MHz T C CE f = 100MHz * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted A Max. Symbol Parameter Units MPSA05 *MMBTA05 P Total Device Dissipation 625 350 mW D Derate above 25°C 5 2.8 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 357 °C/W θJA * Device mounted on FR-4 PCB 1.6” × 0.06" ©2002 Rev. B1, November 2002
