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MPS6514N/a20avaiLeaded Small Signal Transistor General Purpose
MPS6514FAIN/a12avaiLeaded Small Signal Transistor General Purpose
MPS6514FSCN/a28000avaiLeaded Small Signal Transistor General Purpose


MPS6514 ,Leaded Small Signal Transistor General PurposeMPS6514MPS6514NPN General Purpose Amplifier• This device is designed as a general purpose amplifier ..
MPS6514 ,Leaded Small Signal Transistor General Purposeapplications involving pulsed or low duty cycle operations
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MPS6514
NPN General Purpose Amplifier
MPS6514 MPS6514 NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 25 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 4.0 V EBO I Collector current - Continuous 200 mA C T , T Junction and Storage Temperature -55 ~ +150 °C J stg * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage I = 0.5mA, I = 0 25 V (BR)CEO C B V Collector-Base Breakdown Voltage I =10μA, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10μA, I = 0 4.0 V (BR)EBO C C I Collector Cutoff Current V = 30V, I = 0 50 nA CBO CE E I Collector Cutoff Current V = 30V, I = 0, T = 100°C1.0 μA CBO CB E On Characteristics * h DC Current Gain I = 2.0mA, V = 10V 150 300 FE C CE I = 100mA, V = 10V 90 C CE V Collector-Emitter Saturation Voltage I = 50mA, I = 5.0mA 0.5 V CE(sat) C B Small Signal Characteristics C Output Capacitance V = 10V, I = 0, f = 100kHz 3.5 pF obo CB E * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 °C/W θJA ©2004 Rev. A, May 2004
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