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MPIC2113PMOTN/a20avaiHIGH AND LOW SIDE DRIVER


MPIC2113P ,HIGH AND LOW SIDE DRIVERMaximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage ..
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MPIC2130P ,3-PHASE BRIDGE DRIVERMaximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage ..
MPIC2131P ,3 HIGH SIDE & 3 LOW SIDE DRIVERMaximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage ..
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MSP430F2131IRGET ,16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, Comparator 24-VQFN -40 to 85 SLAS439F–SEPTEMBER 2004–REVISED AUGUST 2011Device PinoutDW, PW, or DGV PACKAGE(TOP VIEW)TEST 1 20 ..
MSP430F2131TDGVR ,16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, Comparator 20-TVSOP -40 to 105 SLAS439F–SEPTEMBER 2004–REVISED AUGUST 2011MIXED SIGNAL MICROCONTROLLER1
MSP430F2131TDWR ,16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, Comparator 20-SOIC -40 to 105Functional
MSP430F2131TPW ,16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, Comparator 20-TSSOP -40 to 105FEATURES• Serial Onboard Programming, No ExternalProgramming Voltage Needed, Programmable• Low Supp ..
MSP430F2131TRGER ,16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, Comparator 24-VQFN -40 to 105Table 1. Available OptionsPACKAGED DEVICESPLASTIC PLASTIC PLASTIC PLASTICTA20-PIN SOWB 20-PIN TSSOP ..
MSP430F2131TRGET ,16-Bit Ultra-Low-Power Microcontroller, 8kB Flash, 256B RAM, Comparator 24-VQFN -40 to 105Table 1. Available OptionsPACKAGED DEVICESPLASTIC PLASTIC PLASTIC PLASTICTA20-PIN SOWB 20-PIN TSSOP ..


MPIC2113P
HIGH AND LOW SIDE DRIVER
Power Products Division- -
The MPIC2113 is a high voltage, high speed, power MOSFET and IGBT driver
with independent high and low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction.
Logic inputs are compatible with standard CMOS or LSTTL outputs. The output
drivers feature a high pulse current buffer stage designed for minimum driver
cross–conduction. Propagation delays are matched to simplify use in high frequen-
cy applications. The floating channel can be used to drive an N–channel power
MOSFET or IGBT in the high side configuration which operates from 10 to 600
volts. Floating Channel Designed for Bootstrap Operation Fully Operational to +600 V Tolerant to Negative Transient Voltage dV/dt Immune Gate Drive Supply Range from 10 to 20 V Undervoltage Lockout for Both Channels Separate Logic Supply Operating Supply Range from 5 to 20 V Logic and Power Ground Operating Offset Range from –5 to +5 V CMOS Schmitt–triggered Inputs with Pull–down Cycle by Cycle Edge–triggered Shutdown Logic Matched Propagation Delay for Both Channels Outputs In Phase with Inputs
PRODUCT SUMMARY
VOFFSET 600 V MAX
IO+/– 2 A/2 A
VOUT 10 – 20 V
ton/off (typical) 120 & 94 ns
Delay Matching 10 ns
ORDERING INFORMATION
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