MP4203 ,TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPEAPPLICATIONSUnit in mmHAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOADSWITCHING l l25.2 -+0.24V G ..
MP4207 ,N & P CHANNEL MOS TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS, HELECTRICAL CHARACTERISTICS (Ta=25°C) (Nch MOS FET)CHARACTERISTIC SYMBOL TEST CONDITION UNITGateLeak ..
MP4208 ,Power MOS FET Module Silicon P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. −4 V gate ..
MP4209 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications. For Printer Head Pin Driver and Pulse Motor Driver For Solenoid DriverApplications Unit: mmFor Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver ..
MP4211 ,Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid DriverThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of channel to ambient ΣR ..
MP4212 ,Power MOS FET Module Silicon N&P Channel MOS Type (L2-pi-MOSV 4 in 1) High Power High Speed Switching Applications H-Switch DriverApplications Unit: mmH-Switch Driver 4 V gate drive Small package by full molding (SIP 10 ..
MSM6100 , MSM6100
MSM6100 , MSM6100
MSM6100 , MSM6100
MSM-6100 , MSM6100
MSM6250 , CHIPSET SOLUTION
MSM-6250 , CHIPSET SOLUTION
MP4203
TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE
TOSHIBA
MP4203
TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE (LZ-zr-MOSIII 4 IN 1)
MP4203
HIGH POWER SWITCHING APPLICATIONS
HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD
SWITCHING
0 4V Gate Drive Available
0 Small Package by Full Molding (SIP 10 Pin)
0 High Collector Power Dissipation (4 Devices Operation)
: PT=4W(Ta=25°C)
0 Low Drain-Source ON Resistance : RDS(ON)=0.3Q (Typ.)
: 1Gss= i 10PA (Max.) (VGS= i 16V)
IDss= -100PA (Max.) (V133: -60V)
: Vth = - 0.8~ - 2.0V (ID = - lmA)
0 Low Leakage Current
0 Enhancement-Mode
MAXIMUM RATINGS (Ta = 25°C)
INDUSTRIAL APPLICATIONS
Unit in mm
25.2 $0.2
_7.5 1615 9.0 10.2
2.54 W 0.55 i0.1 5
1.1:0.15
0 SOURCE
6, 8 GATE
7, 9 DRAIN
(PIN 1 AND PIN 10 ARE
DISCONNECTED INTERNALLY)
JEDEC -
EIAJ -
TOSHIBA 2-25AlC
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS -60 V
Gate-Source Voltage VGSS i20 V
Drain Current In -5 A
Peak Drain Current IDP -10 A
Drain Power Dissipation
(1 Device Operation) PD 2.0 W
Drain Power Dissipation
(4 Devices Operation) PDT 4.0 W
Chennel Temperature Teh 150 ''C
Storage Temperature Range Tstg -55--150 T
ARRAY CONFIGURATION
1 c o 10
's? 4 'c? 6 's? 8 'c?
3 5 7 9
Weight : 2.1g (Typ.)
TOSHIBA MP4203
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance of Channel to Ambient Cy
s(4 Devices Operation, Ta=25°C) ERth(ch-a) 31.2 C/W
Maximum Lead Temperature for Soldering Purposes T 260 "C
I(3.2mm from Case for 10s) L
This Transistor is an Electrostatic Sensitive Device. Please Handle with Caution.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS = , 16V, VDS =0 - - , 10 PA
Drain Cut-off Current IDSS V133: -60V, VGS=0 - - -100 PA
Drain-Source Breakdown
Voltage V (BR) DSS ID - - 10mA, VGS=0 - 60 - - V
Gate Threshold Voltage Vth VDS = - 10V, ID = - lmA - 0.8 - - 2.0 V
. . VGS= -4V, ID-- -2.5A - 0.45 0.8
Drain-Source ON Resistance RDS (ON) VGS = - 10V, ID = - 2. 5A 0.30 0.4 n
Forward Transfer Admittance " VDS = - 10V, ID = - 2.5A 1.0 2.0 - S
Input Capacitance Ciss - 380 -
Reverse Transfer Capacitance Crss Vns-- - 10V, VGS=0, f = 1MHz - 90 - pF
Output Capacitance Coss - 270 -
0 ID = - 2.5A
Rise Time t VGS - 30 -
Switching Turn-on Time ton VIN g '7 - 50 -
. ,4 ns
Time . 10
Fall Time tf . Gd - 48 -
V 5VDD=. -30V
. IN : tr, tf< ns
Turn-off Time toff DutyS 1% tw-- 10ps - 120 -
Total Gate Charge Q - 20 -
(Gate-Source Plus Gate-Drain) g VDD'. -48V, VGS= -10V, C
Gate-Source Charge Qgs ID-- -5 A - 12 - n
Gate-Drain ("Miller") Charge di - 8 -
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain Reverse Current IDR - - - -5 A
Peak Drain Reverse Current IDRP - - - -10 A
Diode Forward Voltage VDSF IDR-- -5A, VGS=0 - 1.0 1.6 V
Reverse Recovery Time trr IDR-- -5A, VGS=0 - 170 - ns
Reverse Recovery Charge er dIDR/ dt= -20A/ gs - 0.42 - pd?
TOSHIBA MP4203
rth - tw
CURVES SHOULD BE APPLIED IN
8 300 THERMAL LIMITED AREA
2; (SINGLE NONREPETITIVE PULSE) CO
g BELOW FIGURE SHOW THERMAL --
g 100 RESISTANCE PER 1 UNIT VERSUS .
g PULSE WIDTH. . _
m,‘ . -.-- x N , N
'e''-' .1/ ii-r),
m g 10 - XS:
F n. l i I 1
E .4 NO HEAT SINK AND ATTACHED
E 3 " ON A CIRCUIT BOARD -
E - / (1) 1 DEVICE OPERATION
g A/z" c2) 2 DEVICES OPERATION
[-1 1 Cff)
")ii'(, 3323823 gilt/iff/ CIRCUIT BOARD
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
SAFE OPERATING AREA PT - Ta
g (f) 1 DEVICE OPERATION
. - <2) 2 DEVICES OPERATION
-10 IDP MAX. 10ps X E s: 3 DEVICES OPERATION
z 6 QB 4 DEVICES OPERATION
In M AX E: ATTACHED ON A
-5 lms X Oops g CIRCUIT BOARD
10ms X ii! 4 ts,
-3 100ms X a: _O) - 'rc:::::
S t Q) "ss "ss,,, CIRCUIT BOARD
m 2 T "ss.
J.? 4 <0 "sssttrs?,,t
F4 i'd "s-" ttNs,
E _ E1
E 0 40 80 120 160 200
: AMBIENT TEMPERATURE Ta (°C)
iii -0.5
-0.3 ATch - PT
VDss MAX. 160
X SINGLE NONREPETITIVE ti T C, Ci? Cl)
PULSE Te=25''C 0 V; V, r /
a 120 "
-0.1 CURVES MUST BE DERATED :1 / /" /,
LINEARLY WITH INCREASE 'gr, I / ///
IN TEMPERATURE. BE / Iw,,',,' zezFzsztzzza
-0.05 g = 80 / /
-3 -5 -10 -30 -50 -100 Ea” / / " CIRCUIT BOARD
" 1 / A
DRAIN-SOURCE VOLTAGE VDE (V) e / / ''" ATTACHED ON A
E": 40 I Cd CIRCUIT BOARD
a / f" Ct 1 DEVICE OPERATION
E: / b,'Cts''' C2) 2 DEVICES OPERATION
tr: 7 Ci) 3 DEVICES OPERATION
D 0 (4) 4 DEVICES OPERATION
0 1 2 3 4 5
TOTAL POWER DISSIPATION PT (W)
3 2001-05-24
TOSHIBA MP4203
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-05-24
www.ic-phoenix.com
.
