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MOC70P3FAIN/a400avaiPHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH


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MOC70P3
PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH
MOC70P1 / MOC70P2 / MOC70P3 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS DESCRIPTION 0.510 [12.95] The MOC70PX consists of an infrared light emitting diode coupled to an 0.250 [6.35] NPN silicon phototransistor packaged into an injection molded housing. The housing is designed for wide gap, non 0.506 [12.85] contact sensing. 0.200 [5.08] NOM 0.080 [2.03] NOM 0.153 [3.89] 2X FEATURES C L 0.270 [6.86]  No contact sensing SCHEMATIC  5 mm gap 0.050 [1.27] 14  .040” aperture SEATING PLANE 0.140 [3.56] 0.105 [2.67]  Low profile 0.020 [0.51] 4 X  PCB mount 0.380 [9.65]  Transistor output PIN 3 (COLLECTOR) PIN 2 CATHODE 2 3 0.100 [2.54] NOTES PIN 1 (ANODE) PIN 4 (EMITTER) 1. Derate power dissipation linearly, on each component, 1.67 mW/°C above 25°C. 2. RMA flux is recommended. NOTES: 1. Dimensions for all drawings are in inches (millimeters). 3. Methanol or isopropyl alcohols are recommended as 2. Tolerance of ± .010 (.25) on all non-nominal dimensions cleaning agents. 4. Soldering iron tip 1/16” (1.6mm) from housing. unless otherwise specified. 5. As long as leads are not under any stress or spring tension. (T = 25°C unless otherwise specified) ABSOLUTE MAXIMUM RATINGS A Parameter Symbol Rating Units Operating Temperature T -55 to +100 °C OPR Storage Temperature T -55 to +100 °C STG (2,3,4,5) Soldering Temperature (Iron) T 240 for 5 sec °C SOL-I (2,3,5) Soldering Temperature (Flow) T 260 for 10 sec °C SOL-F EMITTER Continuous Forward Current I 50 mA F Reverse Voltage V 6V R (1) Power Dissipation P 100 mW D SENSOR Collector-Emitter Voltage V 30 V CEO Emitter-Collector Voltage V 4.5 V ECO Collector Current I 20 mA C (1) Power Dissipation P 150 mW D   2001 DS300009 4/25/01 1 OF 5
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