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MN3209PANASONIN/a1avai256 STAGE LOW VOLTAGE OPERATION LOW NOISE BBD


MN3209 ,256 STAGE LOW VOLTAGE OPERATION LOW NOISE BBDGeneral descriptionThe MN3209 is a 256-stage low voltage operation ' =5V) low noise BBD that provid ..
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MRF21085 ,MRF21085, MRF21085R3, MRF21085SR3, MRF21085LSR3 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.78 °C ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF21090/DThe RF Sub–Micron MOSFET Line ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF21090/DThe RF Sub–Micron MOSFET Line ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.65 °C ..


MN3209

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