MN3207 ,1024-Stage Low Voltage Operation, Low Noise BBD for Analog Signal DelaysMOS IC, LSI MN3207MN3 2071024 gtiEtlelErlMt 71' n 'ft-Hiya)) El - / 4 A BBD1024-Stage Low Voltage O ..
MN3208 ,2048 STAGE LOW VOLTAGE OPERATION LOW NOISE BBDApplications Special 8-Lead Dual-ln-Line Plastic Packageq Reverberation and echo effects of audio e ..
MN3209 ,256 STAGE LOW VOLTAGE OPERATION LOW NOISE BBDGeneral descriptionThe MN3209 is a 256-stage low voltage operation ' =5V) low noise BBD that provid ..
MN3307 ,Microcomputers Application-Specific Standard-Product ICsPin DescriptionsPin No. Symbol Pin Name Description1 GND Ground pin Connected to ground.2 CP2 Clock ..
MN34595 ,Image Sensors for Digital Still CamerasFeaturesy Type-1 / 2.33" 16.2 mega pixel CCD image sensory Image size : Type 1/2.33y Unit cell size ..
MN35502 ,For Video稟udiofeatures a built-in digital filter with 16/20-bit input.LRCK 2 27 RSBUPIt uses pulse edge modulatio ..
MRF21060SR3 ,RF Power Field Effect Transistors MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF2106 ..
MRF21085 ,MRF21085, MRF21085R3, MRF21085SR3, MRF21085LSR3 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.78 °C ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF21090/DThe RF Sub–Micron MOSFET Line ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF21090/DThe RF Sub–Micron MOSFET Line ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MN3207
