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MMJT9435N/a7avaiBipolar Power Transistors


MMJT9435 ,Bipolar Power TransistorsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Symbol V ..
MMJT9435T1 ,PNP Bipolar Power TransistorTHERMAL CHARACTERISTICSÎÎÎÎÎÎCharacteristic Symbol Max UnitÎÎThermal Resistance, Junction−to−Case R ..
MMJT9435T3 ,PNP Bipolar Power TransistorMaximum ratings applied to the device are individual stress limitÎvalues (not normal operating cond ..
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MMPQ2222 ,NPN Multi-Chip General Purpose AmplifierMMPQ2222MMPQ2222B4E4NPN Multi-Chip General Purpose AmplifierB3E3B2• This device is for use as a med ..
MMPQ2222A ,SURFACE MOUNT NPN SILICON QUAD TRANSISTOR3V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAINCE FEMMPQ2222A200 500V = 30 VI /I = 10CCC ..
MP8780JS , CMOS 8 BIT VIDEO ANALOG TO DIGITAL CONVERTER
MP8780JS , CMOS 8 BIT VIDEO ANALOG TO DIGITAL CONVERTER
MP8786AS , CMOS 30 MSPS, 8Bit High-Speed, Low Power Analog-to-Digital Converter with Power Down
MP8786AS , CMOS 30 MSPS, 8Bit High-Speed, Low Power Analog-to-Digital Converter with Power Down
MP8799AE , CMOS Very Low Power, 1 MSPS, 10-Bit Analog-to-Digital Converter with 8-Channel Mux
MP8799AE , CMOS Very Low Power, 1 MSPS, 10-Bit Analog-to-Digital Converter with 8-Channel Mux


MMJT9435
Bipolar Power Transistors
- -PNP Silicon Collector –Emitter Sustaining Voltage — VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain — hFE
= 140 (Min) @ IC = 1.2 Adc
= 125 (Min) @ IC = 3.0 Adc Low Collector –Emitter Saturation Voltage — VCE(sat)
= 0.275 Vdc (Max) @ IC = 1.2 Adc
= 0.68 Vdc (Max) @ IC = 5.0 Adc SOT–223 Surface Mount Packaging
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This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.

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