MMJT350T1 ,Bipolar Power Transistors2MMJT350T1200 1.0T = 150°CJT = 25°CJ0.825°C100V @ I /I = 10BE(sat) C B700.6 V @ V = 10 VBE CE-55°C ..
MMJT9410T1 ,NPN Bipolar Power TransistorELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CÎCharacteristic Symbol Min Typ Max Uni ..
MMJT9410T1 ,NPN Bipolar Power Transistor3V, VOLTAGE (V) H , DC CURRENT GAIN V , COLLECTOR-EMITTER VOLTAGE (V)FE CE(sat)V, VOLTAGE (V) H , D ..
MMJT9435 ,Bipolar Power TransistorsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Symbol V ..
MMJT9435T1 ,PNP Bipolar Power TransistorTHERMAL CHARACTERISTICSÎÎÎÎÎÎCharacteristic Symbol Max UnitÎÎThermal Resistance, Junction−to−Case R ..
MMJT9435T3 ,PNP Bipolar Power TransistorMaximum ratings applied to the device are individual stress limitÎvalues (not normal operating cond ..
MP8780 , CMOS 8 BIT VIDEO ANALOG TO DIGITAL CONVERTER
MP8780JS , CMOS 8 BIT VIDEO ANALOG TO DIGITAL CONVERTER
MP8780JS , CMOS 8 BIT VIDEO ANALOG TO DIGITAL CONVERTER
MP8786AS , CMOS 30 MSPS, 8Bit High-Speed, Low Power Analog-to-Digital Converter with Power Down
MP8786AS , CMOS 30 MSPS, 8Bit High-Speed, Low Power Analog-to-Digital Converter with Power Down
MP8799AE , CMOS Very Low Power, 1 MSPS, 10-Bit Analog-to-Digital Converter with 8-Channel Mux
MMJT350T1
Bipolar Power Transistors
MMJT350T1
Bipolar Power T ransistors
PNP Silicon.. designed for use in line−operated applications such as low
power, line−operated series pass and switching regulators requiring
PNP capability. High Collector−Emitter Sustaining Voltage −
VCEO(sus) = 300 Vdc @ IC 1.0 mAdc Excellent DC Current Gain −
hFE= 30−240 @ IC
= 50 mAdc Epoxy Meets UL94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
