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MMDF2P02HDR2MOTN/a522avaiPower MOSFET 2 Amps, 20 Volts
MMDF2P02HDR2ONN/a937avaiPower MOSFET 2 Amps, 20 Volts


MMDF2P02HDR2 ,Power MOSFET 2 Amps, 20 VoltsApplications EngineerAPPLICATION NOTEINTRODUCTIONA new technology, HDTMOS, was recently introduced ..
MMDF2P02HDR2 ,Power MOSFET 2 Amps, 20 Volts3R , DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)DS(on ..
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MMDF2P02HDR2
Power MOSFET 2.5 Amps, 25 Volts
AN1520/D
HDTMOS Power MOSFETs
Excel in Synchronous
Rectifier Applications
Prepared by: Scott Deuty,
Applications Engineer
INTRODUCTION

A new technology, HDTMOS, was recently introduced
which addresses the needs of today’s power transistor users.
This development couples VLSI techniques with the
ruggedness of vertical power structures to obtain an
increased cell density and provide devices that exhibit lower
overall RDS(on). As an added benefit, the reverse recovery
characteristic of the parasitic body diode was observed to be
faster than MOSFETs constructed with standard
technologies [1], therefore, making HDTMOS a logical
choice for a number of applications, including synchronous
rectifier power converters. The following is an investigation
of the advantages of employing HDTMOS transistors as
synchronous rectifiers in a high power buck converter and
a 5 Vdc to 3.3 Vdc buck converter in order to increase circuit
performance and efficiency while possibly reducing parts
count.
Using HDTMOS Transistors in Synchronous
Rectifier Applications

The low RDS(on) and intrinsic diode recovery
characteristics of HDTMOS transistors are useful attributes
for synchronous rectifier applications. Because of the
reduced RDS(on), HDTMOS transistors can lower
conduction losses resulting in improved efficiency over
Figure 1. Typical Buck Regulator Employing a Synchronous Rectifier

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