| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MMBZ5235BW-7-F |
美台 |
N/a |
39000 |
 |
200mW SURFACE MOUNT ZENER DIODE |
| MMBZ5235BW-7-F |
DIODES |
N/a |
9000 |
|
200mW SURFACE MOUNT ZENER DIODE |
MMBZ5235B-X-F
MMBZ5236B FAIRCHILD,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA.
MMBZ5236B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA.
MMBZ5236B VISHAY,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA.
MMBZ5236B MOTO,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA.
MMBZ5235BW-7-F , 200mW SURFACE MOUNT ZENER DIODE
MMBZ5236B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA.Discrete POWER & SignalTechnologiesNMMBZ5226B - MMBZ5257B Series ZenersTolerance: B = 5%Absolute Ma ..
MMBZ5236B-7-F , 350mW SURFACE MOUNT ZENER DIODE
MMBZ5236BLT1 ,Small Signal 7.5V 5%MOTOROLASEMICONDUCTORTECHNICAL DATAGENERAL225 mW SOT-23DATAZener Voltage Regulator Diodes225 mWGENE ..
MMBZ5236BS-7-F , 200mW SURFACE MOUNT ZENER DIODE
MP4021 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
MP4021. ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Applications High Power Switching
MP4024 ,Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.Thermal Characteristics Characteristics Symbol MaxUnit Thermal resistance of junction to ambient 31 ..
