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MMBT2907AWSECOSN/a2774avaiTransistor
MMBT2907AWT1ONN/a9000avaiGeneral Purpose Transistor(PNP Silicon)


MMBT2907AWT1 ,General Purpose Transistor(PNP Silicon)2MMBT2907AWT1PACKAGE DIMENSIONSSC−70/SOT−323CASE 419−04ISSUE LNOTES:A1. DIMENSIONING AND TOLERANCIN ..
MMBT2907AWT1G ,General Purpose Transistor PNP SiliconMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
MMBT2907LT1 ,General Purpose Transistor(PNP Silicon)**Order this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2907LT1/D * COLLECTORPNP Silicon3*Motorola ..
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MMBT3640 ,PNP silicon switcing transistor.THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR-5 Board,' PD 225 m ..
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MMBT2907AW-MMBT2907AWT1
Transistor
MMBT2907AWT1
Preferred Device

General Purpose T ransistor
PNP Silicon

These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 package which
is designed for low power surface mount applications.
Features
Pb−Free Package is Available
MAXIMUM RATINGS
THERMAL CHARACTERISTICS

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected. FR−5 = 1.0 x 0.75 x 0.062 in.
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