| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MMBT1616AL-G-AE3-R |
UTC |
N/a |
84000 |
 |
NPN EPITAXIAL SILICON TRANSISTOR |
MMBT170LT1 ON
MMBT1815 UTC, HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR
MMBT1815G ST
MMBT1815LT1 ON
MMBT199LT1(MEC) MOTOROLA
MMBT200 FAIRCHILD,PNP General Purpose Amplifier
MMBT1616AL-G-AE3-R , NPN EPITAXIAL SILICON TRANSISTOR
MMBT200A ,PNP General Purpose Amplifier
MMBT200A ,PNP General Purpose Amplifier
MMBT2131 ,Bipolar Junction TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MMBT2131T1 ,Bipolar Junction Transistor2h , DC CURRENT GAIN V , COLLECTOR-EMITTER VOLTAGE (V)CE(sat)FEV , COLLECTOR-EMITTER VOLTAGE (V)VOL ..
MOC5008 ,6-Pin DIP Optoisolators Logic OutputMAXIMUM RATINGS (T = 25°C unless otherwise noted)A2 5Rating Symbol Value Unit43INPUT LEDReverse Vol ..
MOC5009 ,6-Pin DIP Optoisolators Logic OutputMAXIMUM RATINGS (T = 25°C unless otherwise noted)A2 5Rating Symbol Value Unit43INPUT LEDReverse Vol ..
MOC70P3 ,PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCHMOC70P1 / MOC70P2 / MOC70P3PHOTOTRANSISTOR OPTICALINTERRUPTER SWITCHPACKAGE DIMENSIONSDESCRIPTION 0 ..
