MM74C908N ,Dual CMOS 30-Volt Relay DriverFeaturesV - 3V, and T = 65°C.CC J Wide supply voltage range: 3V to 18VThe MM74C908 consists of two ..
MM74C90N ,4-Bit Decade / Binary CounterMM54C90/MM74C904-BitDecadeCounterMM54C93/MM74C934-BitBinaryCounterFebruary1988MM54C90/MM74C904-BitD ..
MM74C910N , 256-Bit TRI-STATE Random Access Read/Write Memory
MM74C911N , 4-Digit Expandable Segment Display ControllerGeneral Descriptiontor when the control pin labeled DIGIT INPUT OUTPUT,The MM74C911 display control ..
MM74C912N ,6-Digit BCD Display Controller/DriverFeaturesrequired. A self-contained internal oscillator sequentiallypresents the stored data to a de ..
MM74C912N ,6-Digit BCD Display Controller/DriverFunctional DescriptionCharacter FontSegment IdentificationThe MM74C912 display controller is manufa ..
MN3610H ,Image Pickup DevicesAbsolute Maximum Ratings (Ta=25˚C, V =0V)SSParameter Symbol Rating UnitVPower supply voltage DD – 0 ..
MN3611 ,Image Pickup DevicesFeatures ø 4 19 øR 2• 2160 floating photodiodes and n-channel buried type CCD shiftNC 5 18 NCregist ..
MN3611RE ,Image Pickup DevicesAbsolute Maximum Ratings (Ta=25˚C, VSS=0V)Parameter Symbol Rating UnitVDDPower supply voltage – 0.3 ..
MN3615 ,Image Pickup DevicesFeatures ø 4 19 øR 2A• 2592 floating photodiodes and n-channel buried type CCD shift ø 5 18 NC1Breg ..
MN3644D ,Image Pickup DevicesFeatures V 4 19 OGSSA• 2048 floating photodiodes and n-channel buried type CCD shiftNC 5 18 NCregis ..
MN3646 ,Image Pickup DevicesFeaturesRS 4 19 RD• 2880 floating photodiodes and n-channel buried type CCD shiftBT 5 18 NCregister ..
MM74C908N
Dual CMOS 30-Volt Relay Driver
MM74C908 Dual CMOS 30-Volt Relay Driver October 1987 Revised January 1999 MM74C908 Dual CMOS 30-Volt Relay Driver normal CMOS voltage levels to driving relays, regulators, General Description lamps, etc. The MM74C908 is a general purpose dual high voltage driver capable of sourcing a minimum of 250 mA at V = OUT Features V − 3V, and T = 65°C. CC J � Wide supply voltage range: 3V to 18V The MM74C908 consists of two CMOS NAND gates driv- � High noise immunity: 0.45 V (typ.) CC ing an emitter follower Darlington output to achieve high current drive and high voltage capabilities. In the “OFF” � Low output “ON” resistance: 8Ω (typ.) state the outputs can withstand a maximum of −30V across � High voltage: −30V the device. These CMOS drivers are useful in interfacing � High current: 250 mA Ordering Code: Order Number Package Number Package Description MM74C908N N08E 8-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” Wide Connection Diagram Pin Assignments for DIP Top View © 1999 DS005912.prf
