| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MLF2012C680KT |
TDK |
N/a |
2000 |
 |
Inductors for Standard Circuits Multilayer/STD magnetic shielded MLF series |
MLF2012C680KT000 TDK
MLF2012C680KT000
MLF2012D100KT000 TDK原盘
MLF2012D150K04L TDK
MLF2012D1R0KT000 TDK原盘
MLF2012D2N2ST000 TDK
MLF2012D47NMT000 TDK
MLF2012D47NMT000
MLF2012D68NKT000
MLF2012D68NKT000 TDK
MLF2012D68NM TDK
MLF2012D68NMT000 TDK
MLF2012D68NMT000
MLF2012D82NMT000
MLF2012D82NMT000 TDK
MLF2012DF3N3KT000 TDK
MLF2012C680KT , Inductors for Standard Circuits Multilayer/STD magnetic shielded MLF series
MLF2012DR10KT , Inductors for Standard Circuits Multilayer/STD magnetic shielded MLF series
MLF2012DR12KT , Inductors for Standard Circuits Multilayer/STD magnetic shielded MLF series
MLF2012DR18KT , Inductors for Standard Circuits Multilayer/STD magnetic shielded MLF series
MLF2012DR22KT , Inductors for Standard Circuits Multilayer/STD magnetic shielded MLF series
MMBZ5255BLT1 ,Zener voltage regulator diodeELECTRICAL CHARACTERISTICS (T = 25°C unlessAIotherwise noted, V = 0.95 V Max. @ I = 10 mA)F FIFSymb ..
MMBZ5256B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 30.0 V. Test current 4.2 mA.applications involving pulsed3 or low duty cycle operations.2 NC1
MMBZ5256B ,Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 30.0 V. Test current 4.2 mA.applications involving pulsed3 or low duty cycle operations.2 NC1
