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MJL16218MOTOROLAN/a9avaiPOWER TRANSISTOR 15 AMPERES 1500 VOLTS


MJL16218 ,POWER TRANSISTOR 15 AMPERES 1500 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
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MJL21193 ,16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTSOrder this document**by MJL21193/DSEMICONDUCTOR TECHNICAL DATA** ** ** **The MJL21193 and MJL21194 ..
MJL21194 ,16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typical Max ..
MJL3281 ,15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.7 °C/ ..
MJL3281A ,15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTSOrder this document**by MJL3281A/DSEMICONDUCTOR TECHNICAL DATA*  * ** **" **Motorola Preferred Dev ..
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MM74HC373MTCX ,3-STATE Octal D-Type LatchFeaturessuited for interfacing with bus lines in a bus organized sys-tem. Typical propagation delay ..
MM74HC373MTCX ,3-STATE Octal D-Type LatchFeaturessuited for interfacing with bus lines in a bus organized sys-tem. Typical propagation delay ..
MM74HC373MTCX ,3-STATE Octal D-Type LatchGeneral Descriptionstorage elements.The MM74HC373 high speed octal D-type latches utilizeThe 74HC l ..
MM74HC373MTCX ,3-STATE Octal D-Type LatchMM74HC373 3-STATE Octal D-Type LatchSeptember 1983Revised February 1999MM74HC3733-STATE Octal D-Typ ..
MM74HC373N ,3-STATE Octal D-Type LatchMM74HC373 3-STATE Octal D-Type LatchSeptember 1983Revised February 1999MM74HC3733-STATE Octal D-Typ ..


MJL16218
POWER TRANSISTOR 15 AMPERES 1500 VOLTS
 - NPN Bipolar Power Deflection Transistor
For High and Very High Resolution Monitors

The MJL16218 is a state–of–the–art SWITCHMODE bipolar power transistor. It is
specifically designed for use in horizontal deflection circuits for 20 mm diameter neck,
high and very high resolution, full page, monochrome monitors. 1500 Volt Collector–Emitter Breakdown Capability Typical Dynamic Desaturation Specified (New Turn–Off Characteristic) Application Specific State–of–the–Art Die Design Fast Switching:
175 ns Inductive Fall Time (Typ)
2000 ns Inductive Storage Time (Typ) Low Saturation Voltage:
0.2 Volts at 5.0 Amps Collector Current and 2.0 A Base Drive Low Collector–Emitter Leakage Current — 250 μA Max at 1500 Volts — VCES High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
8.0 Volts (Min)
MAXIMUM RATINGS
THERMAL CHARACTERISTICS

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
(2) Proper strike and creepage distance must be provided.
Designer’s and SCANSWITCH are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

SEMICONDUCTOR TECHNICAL DATA
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*Motorola Preferred Device
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