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Partno	Mfg	Dc	Qty	Available	Descript
MJF18006		N/a	1	avai	POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS

MJF18006 ,POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTSELECTRICAL CHARACTERISTICS (T = 25ÎÎÎÎ * C unless otherwise specified)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJF18008 ,POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS2MJE18008 MJF18008ÎÎÎÎCharacteristic Symbol Min Typ Max UnitÎÎÎDYNAMIC CHARACTERISTICSÎÎÎCurrent Ga ..
MJF3055 ,Power 10A 60V NPN3V, VOLTAGE (VOLTS)I , COLLECTOR CURRENT (AMPS)CP , POWER DISSIPATION (WATTS)DV, VOLTAGE (VOLTS) h ..
MJF31C ,Complementary Silicon Plastic Power Transistors3P , POWER DISSIPATION (WATTS)Dt, TIME μ (s)MJF31C* (NPN), MJF32C* (PNP)1.00.7D = 0.50.50.3 0.20. ..
MJF32C ,Complementary Silicon Plastic Power TransistorsMAXIMUM RATINGSMJF3xCÎÎÎÎÎÎMJF31C YWWÎMJF32CRating Symbol UnitSTYLE 1:PIN 1. BASEÎÎCollector–Emitte ..
MJF45H11 ,Trans GP BJT PNP 80V 10A 3-Pin(3+Tab) TO-220 Full-Pak RailELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎCharacteristic Symbol Min Typ Max Uni ..
MM74HC32MTC ,Quad 2-Input OR GateElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CA ASymbol Parameter Conditions V UnitsCC ..
MM74HC32MTCX ,Quad 2-Input OR GateElectrical Characteristics V = 5V, T = 25°C, C = 15 pF, t = t = 6 nsCC A L r fGuaranteedSymbol Para ..
MM74HC32MTCX ,Quad 2-Input OR GateMM74HC32 Quad 2-Input OR GateSeptember 1983Revised January 2005MM74HC32Quad 2-Input OR Gate
MM74HC32MX ,Quad 2-Input OR GateMM74HC32 Quad 2-Input OR GateSeptember 1983Revised January 2005MM74HC32Quad 2-Input OR Gate
MM74HC32N ,Quad 2-Input OR GateMM74HC32 Quad 2-Input OR GateSeptember 1983Revised January 2005MM74HC32Quad 2-Input OR Gate
MM74HC32SJX ,Quad 2-Input OR GateFeaturesThe MM74HC32 OR gates utilize advanced silicon-gate

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MJF18006
POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS
 - NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18006 have an applications specific state–of–the–art die designed
for use in 220 V line–operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following: Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE Fast Switching No Coil Required in Base Circuit for Turn–Off (No Current Tail) Tight Parametric Distributions are Consistent Lot–to–Lot Two Package Choices: Standard TO–220 or Isolated TO–220 MJF18006, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
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(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. (continued)
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
*Motorola Preferred Device

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