MJE350 ,Leaded Power Transistor General PurposeMJE340MJE350COMPLEMETARY SILICON POWER TRANSISTORS■ SGS-THOMSON PREFERRED SALESTYPES■ COMPLEMENTARY ..
MJE350STU ,PNP Epitaxial Silicon TransistorApplications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJ ..
MJE371 ,Leaded Power Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎÎÎÎÎCharacteristic Symbol Min Max Uni ..
MJE4342 ,POWER TRANSISTORS(16A,100-160V,125W)
MJE5730 ,1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTSMAXIMUM RATINGSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJE5731 ,Power 1A 350V Discrete PNPTHERMAL CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MM74HC251MTCX ,8-Channel 3-STATE MultiplexerMM74HC251 8-Channel 3-STATE MultiplexerSeptember 1983Revised February 1999MM74HC2518-Channel 3-STAT ..
MM74HC251MX ,8-Channel 3-STATE Multiplexerfeatures both true (Y) and complement Wide supply range: 2–6V(W) outputs as well as a STROBE input. ..
MM74HC251N ,8-Channel 3-STATE Multiplexerfeatures both true (Y) and complement Wide supply range: 2–6V(W) outputs as well as a STROBE input. ..
MM74HC251N ,8-Channel 3-STATE MultiplexerFeaturesput drive capability and 3-STATE feature make this partideally suited for interfacing with ..
MM74HC251N ,8-Channel 3-STATE MultiplexerGeneral Descriptionfunction, as well as pinout compatible with the standardThe MM74HC251 8-channel ..
MM74HC253N ,Dual 4-Channel TRI-STATE MultiplexerMM54HC253/MM74HC253Dual4-ChannelTRI-STATEMultiplexerJanuary1988MM54HC253/MM74HC253Dual4-ChannelTRI- ..
MJE350
Leaded Power Transistor General Purpose
MJE340
MJE350COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES
APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION The MJE340 is a silicon epitaxial planar NPN
transistor intended for use in medium power
linear and switching applications.It is mounted in
SOT-32.
The complementary PNP type is MJE350.
June 1997
ABSOLUTE MAXIMUM RATINGS For PNP types voltage and current values are negative.
1/5
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300μs, duty cycle ≤ 2%
Safe Operating Area Derating Curve
MJE340 / MJE3502/5
DC Current Gain (NPN type)
Collector Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (PNP type)
MJE340 / MJE3503/5
MJE340 / MJE3504/5
. However, SGS-THOMSON Microelectronics assumes no responsability for the
or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
MJE340 / MJE3505/5
:
www.ic-phoenix.com
.
