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MJE3440STN/a685avaiLeaded Power Transistor General Purpose
MJE3440N/a17avaiLeaded Power Transistor General Purpose


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MJE3440
Leaded Power Transistor General Purpose
MJE3440
SILICON NPN TRANSISTOR
SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR
DESCRIPTION

The MJE3440 is a NPN silicon epitaxial planar
transistors in SOT-32 plastic package. It is
designed for use in consumer and industrial
line-operated applications.
June 1997
ABSOLUTE MAXIMUM RATINGS

1/5
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300μs, duty cycle ≤ 1.5 %
Safe Operating Area Derating Curve
MJE3440

2/5
DC Current Gain
Base-emitter Voltage
Collector-emitter Saturation Voltage
Transition Frequency
MJE3440

3/5
MJE3440
4/5
. However, SGS-THOMSON Microelectronics assumes no responsability for the
or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
MJE3440

5/5
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