IC Phoenix
 
Home ›  MM140 > MJE2955T-MJE3055T,Leaded Power Transistor General Purpose
MJE2955T-MJE3055T Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
MJE2955TONN/a50avaiLeaded Power Transistor General Purpose
MJE3055TONN/a38avaiLeaded Power Transistor General Purpose


MJE2955T ,Leaded Power Transistor General PurposeTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case θ 1.67 C ..
MJE2955TG , Complementary Silicon Plastic Power Transistors
MJE3055T ,Leaded Power Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJE3055TG , Complementary Silicon Plastic Power Transistors
MJE3055TG , Complementary Silicon Plastic Power Transistors
MJE340 ,Leaded Power Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitÎÎÎ ..
MM74HC245AMTC ,Octal 3-STATE TransceiverGeneral Descriptionhave Schmitt trigger inputs. All inputs are protected fromThe MM74HC245A 3-STATE ..
MM74HC245AMTC ,Octal 3-STATE TransceiverFeaturesspeed operation even when driving large bus capaci-tances. This circuit possesses the low p ..
MM74HC245AMTCX ,Octal 3-STATE TransceiverMM74HC245A Octal 3-STATE TransceiverSeptember 1983Revised February 1999MM74HC245AOctal 3-STATE Tran ..
MM74HC245AN ,Octal 3-STATE TransceiverMM74HC245A Octal 3-STATE TransceiverSeptember 1983Revised February 1999MM74HC245AOctal 3-STATE Tran ..
MM74HC245ASJ ,Octal 3-STATE TransceiverMM74HC245A Octal 3-STATE TransceiverSeptember 1983Revised February 1999MM74HC245AOctal 3-STATE Tran ..
MM74HC245ASJX ,Octal 3-STATE TransceiverMM74HC245A Octal 3-STATE TransceiverSeptember 1983Revised February 1999MM74HC245AOctal 3-STATE Tran ..


MJE2955T-MJE3055T
Leaded Power Transistor General Purpose
Complementary Silicon Plastic
Power Transistors.. designed for use in general–purpose amplifier and switching
applications. DC Current Gain Specified to 10 Amperes High Current Gain — Bandwidth Product —
fT = 2.0 MHz (Min) @ IC
= 500 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 30
, COLLECT
OR CURRENT
(AMP)
7.0 1060
0.3 There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150�C. TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
� 150�C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown. (See
AN415A)
*ON Semiconductor Preferred Device
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED