MJE210STU ,PNP Epitaxial Silicon TransistorMJE210MJE210Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Produc ..
MJE2360T ,0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTSMAXIMUM RATINGSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJE2361T ,POWER TRANSISTORS(0.5A,350V,30W)THERMAL CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJE243 ,Leaded Power Transistor General PurposeON SemiconductorNPNComplementary Silicon Power MJE243*PNPPlastic Transistors*MJE253...designed for ..
MJE243 ,Leaded Power Transistor General Purpose2TCP , POWER DISSIPATION (WATTS)DMJE243 MJE253VCC+30 V1K500tRrC 30025 μs200SCOPE+11 VRB100050D51 1 ..
MJE243 ,Leaded Power Transistor General Purpose
MM74HC244SJ ,Octal 3-STATE BufferFeaturesThe MM74HC244 is a non-inverting buffer and has two
MJE210STU
PNP Epitaxial Silicon Transistor
MJE210 MJE210 Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : f =65MHz@I = -100mA (Min.) T C Complement to MJE200 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 40 V CBO V Collector-Emitter Voltage - 25 V CEO V Emitter-Base Voltage - 8 V EBO I Collector Current - 5 A C P Collector Dissipation (T =25°C) 15 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I = - 10mA, I = 0 -25 V CEO C B I Collector Cut-off Current V = -40V, I = 0 -100 nA CBO CB E V = - 40V, I =0 @ T = 125°C -100 μA CB E J I Emitter Cut-off Current V = - 8V, I = 0 -100 nA EBO BE C h DC Current Gain V = - 1V, I = - 500mA 70 FE1 CE C h V = - 1V, I = - 2A 45 180 FE2 CE C h V = - 2V, I = - 5A 10 FE3 CE C V (sat) Collector-Emitter Saturation Voltage I = - 500mA, I = - 50mA -0.3 V CE C B I = - 2A, I = - 200mA -0.75 V C C I = - 5A, I = - 1A -1.8 V C B V (sat) Base-Emitter Saturation Voltage I = - 5A, I = - 1A -2.5 V BE C B V (on) Base-Emitter ON Voltage V = - 1V, I = - 2A -1.6 V BE CE C f Current Gain Bandwidth Product V = - 10V, I = - 100mA 65 MHz T CE C C Output Capacitance V = - 10V, I = 0, f = 1MHz 120 pF ob CB E ©2001 Rev. A1, February 2001
