MJE200TSTU ,NPN Epitaxial Silicon TransistorMJE200MJE200Feature• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product ..
MJE210 ,Leaded Power Transistor General PurposeTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case θ 8.34 C ..
MJE210G , Complementary Silicon Power Plastic Transistors
MJE210STU ,PNP Epitaxial Silicon TransistorMJE210MJE210Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Produc ..
MJE2360T ,0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTSMAXIMUM RATINGSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MJE2361T ,POWER TRANSISTORS(0.5A,350V,30W)THERMAL CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ..
MM74HC243N ,Inverting Quad TRI-STATE TransceiverMM54HC242/MM74HC242InvertingQuadTRI-STATETransceiverMM54HC243/MM74HC243QuadTRI-STATETransceiverJanu ..
MM74HC244 ,Octal TRI-STATE(RM) BufferMM54HC244/MM74HC244OctalTRI-STATEBufferJanuary1988MM54HC244/MM74HC244OctalTRI-STATEÉBufferGeneralDe ..
MM74HC244MTC ,Octal 3-STATE BufferFeaturesThe MM74HC244 is a non-inverting buffer and has two
MJE200STU-MJE200TSTU
NPN Epitaxial Silicon Transistor
MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : f =65MHz @ I =100mA (Min.) T C • Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter- Base Voltage 8 V EBO I Collector Current 5 A C P Collector Dissipation (T =25°C) 15 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I =10mA, I =0 25 V CEO C B I Collector Cut-off Current V =40V, I =0 100 nA CBO CB E V =40V, I =0 @ T =125°C 100 μA CB E J I Emitter Cut-off Current V =8V, I =0 100 nA EBO BE C h DC Current Gain V =1V, I =500mA 70 FE CE C V =1V, I =2A 45 180 CE C V =2V, I =5A 10 CE C V (sat) Collector-Emitter Saturation Voltage I =500mA, I =50mA 0.3 V CE C B I =2A, I =200mA 0.75 V C C I =5A, I =1A 1.8 V C B V (sat) Base- Emitter Saturation Voltage I =5A, I =1A 2.5 V BE C B V (on) Base-Emitter ON Voltage V =1V, I =2A 1.6 V BE CE C f Current Gain Bandwidth Product V =10V, I =100mA 65 MHz T CE C C Output Capacitance V =10V, I =0, f=0.1MHz 80 pF ob CB E ©2001 Rev. A2, June 2001
