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MJE172STN/a1avaiLeaded Power Transistor General Purpose
MJE182STN/a30156avaiLeaded Power Transistor General Purpose


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MJE172-MJE182
Leaded Power Transistor General Purpose
MJE172
MJE182

COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION

The MJE172 (PNP type) and MJE182 (NPN type)
are silicon epitaxial planar, complementary
transistors in Jedec SOT-32 plastic package, they
are designed for low power audio amplifier and
low current, high speed switching applications.
September 1998
ABSOLUTE MAXIMUM RATINGS

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THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300μs, duty cycle ≤ 1.5%
For PNP type voltage and current values are negative.
MJE172 - MJE182

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MJE172 - MJE182
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. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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MJE172 - MJE182

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