MJE13005 ,Leaded Power Transistor General PurposeON Semiconductor*MJE13005SWITCHMODE Series*ON Semiconductor Preferred DeviceNPN Silicon Power Tra ..
MJE13005G , 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 75 WATTS
MJE13007 ,Leaded Power Transistor General PurposeTHERMAL CHARACTERISTICSThermal Resistance R °1.56° °3.12° °C/WθJCCASE 221D–02— Junction to Case R ° ..
MJE13007. ,Leaded Power Transistor General PurposeTHERMAL CHARACTERISTICSThermal Resistance R °1.56° °3.12° °C/WθJCCASE 221D–02— Junction to Case R ° ..
MJE13007A ,Leaded Power Transistor General PurposeMJE13007A SILICON NPN SWITCHING TRANSISTOR■ SGS-THOMSON PREFERRED SALESTYPE■ NPN TRANSISTOR ■ HIGH ..
MJE13007F , TRIPLE DIFFUSED NPN TRANSISTOR (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER)
MM74HC154WM ,4 to 16 Line DecoderMM74HC154 4-to-16 Line DecoderSeptember 1983Revised July 2003MM74HC1544-to-16 Line DecoderEach outp ..
MM74HC154WMX ,4 to 16 Line DecoderFeaturesspeeds similar to low power Schottky TTL circuits.
MJE13005
Leaded Power Transistor General Purpose
SWITCHMODE� Series
NPN Silicon Power T ransistors
These devices are designed for high–voltage, high–speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES: VCEO(sus) 400 V Reverse Bias SOA with Inductive Loads @ TC = 100�C Inductive Switching Matrix 2 to 4 Amp, 25 and 100�C
tc @ 3A, 100�C is 180 ns (Typ) 700 V Blocking Capability SOA and Switching Applications Information.
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(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle � 10%.
*ON Semiconductor Preferred Device
