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MJD50T4 from STMicroelectronics, ST Microelectronics 17500pcs , TO252,Power 1A 400V SM NPN
Partno Mfg Dc Qty Available
MJD50T4 STMicroelectronics N/a 17500
MJD50T4 from STM, ST Microelectronics 1432pcs , TO252,Power 1A 400V SM NPN
MJD50T4 from MOT, Motorola 5000pcs , TO252,Power 1A 400V SM NPN

MJD50®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HIGH VOLTAGE CAPABILITY ■ SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX "T4")■ ELECTRICALLY SIMILAR TO TIP503MJD50®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE■ HIGH VOLTAGE CAPABILITY ■ SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX "T4")■ ELECTRICALLY SIMILAR TO TIP503MAXIMUM RATINGSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RatingÎÎÎÎÎÎÎÎÎÎÎÎ SymbolÎÎÎÎÎÎÎÎÎÎÎÎ MJD47ÎÎÎÎÎÎÎÎÎÎÎÎ MJD50ÎÎÎÎÎÎÎÎÎ UnitÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter VoltageÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 250ÎÎÎÎÎÎÎÎÎÎÎÎ 400ÎÎÎÎÎÎÎÎÎÎÎÎ VdcCEO CASE 369A–13ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base VoltageÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 350ÎÎÎÎÎÎÎÎ 500ÎÎÎÎÎÎÎÎÎÎÎÎ VdcCBÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base VoltageÎÎÎÎÎÎÎÎÎÎÎÎ VÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 5ÎÎÎÎÎÎÎÎÎ VdcEBÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — ContinuousÎÎÎÎÎÎÎÎÎÎÎÎ IÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1ÎÎÎÎÎÎÎÎÎ AdcCPeak 2ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current I 0.6 AdcBÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ T = 25* C P 15 WattsCASE 369–07C DÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ0.12 W/* CDerate above 25* CÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation* @ T = 25* C P 1.56 WattsA DÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25* CÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 0.0125ÎÎÎÎÎÎ W/* CMINIMUM PAD SIZESÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction T , T –65 to +150 * CJ stgRECOMMENDED FORTemperature RangeÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSURFACE MOUNTEDÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJD50T4G (J50G) ON

MJD50T4 ,Power 1A 400V SM NPNMAXIMUM RATINGSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RatingÎÎÎÎÎÎÎÎÎÎÎÎ Symbo ..
MJD50TF ,NPN Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
MJD5731T4 ,High Voltage PNP Silicon Power Transistors20.243 0.1906.172 4.8260.0631.60.1002.540.118 0.1653.0 4.191MJD57312001.4V = 10 VCE1.2100T = 150°CJ ..
MJD6039 ,SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTSELECTRICAL CHARACTERISTICS10.7D = 0.50.50.30.20.2P(pk)0.1R = r(t) RJC(t) JC0.05R = 6.25°C/WJC0.1 ..
MJD6039T4 ,SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MM74HC14SJX ,Hex Inverting Schmitt TriggerElectrical Characteristics V = 5V, T = 25°C, C = 15 pF, t = t = 6 nsCC A L r fSymbol Parameter Cond ..
MM74HC14SJX ,Hex Inverting Schmitt TriggerElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −55 to 125°CA A A VSymbol Parameter ..
MM74HC151M ,8-Channel Digital MultiplexerMM74HC151 8-Channel Digital MultiplexerSeptember 1983Revised February 1999MM74HC1518-Channel Digita ..
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