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MJD42ONN/a300avaiGeneral Purpose Amplifier


MJD42 ,General Purpose AmplifierApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
MJD42C ,PNP Epitaxial Silicon Transistorhttp://onsemi.com3h , DC CURRENT GAIN P , POWER DISSIPATION (WATTS)V, VOLTAGE (VOLTS) FE Dt, TIME ( ..
MJD42C1 ,Power 6A 100V PNPMaximum ratings applied to the device are individual stress limit values (not and best overall valu ..
MJD42C1 ,SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
MJD42CT4 ,Power 6A 100V PNPFeatures6 AMPERES• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)100 VOL ..
MJD44E3 ,NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTSMAXIMUM RATINGSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Symbol Value UnitÎÎÎÎÎÎÎÎÎÎÎ ..
MM74HC138MX ,3 to 8 Line DecoderMM74HC138 3-to-8 Line DecoderSeptember 1983Revised February 1999MM74HC1383-to-8 Line DecoderThe dec ..
MM74HC138N ,3 to 8 Line DecoderMM74HC138 3-to-8 Line DecoderSeptember 1983Revised February 1999MM74HC1383-to-8 Line DecoderThe dec ..
MM74HC138SJ ,3 to 8 Line DecoderGeneral DescriptionTTL equivalent loads, and are functionally and pin equiva-The MM74HC138 decoder ..
MM74HC138SJX ,3 to 8 Line Decoderfeatureshigh noise immunity and low power consumption usually
MM74HC139M ,Dual 2-to-4 Line DecoderFeaturesThe MM74HC139 decoder utilizes advanced silicon-gate

MJD42
General Purpose Amplifier
MJD42C MJD42C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage -100 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -6 A C I Collector Current (Pulse) -10 A CP I Base Current -2 A B P Collector Dissipation (T =25°C) 20 W C C Collector Dissipation (T =25°C) 1.75 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage I = - 30mA, I = 0 -100 V CEO C B I Collector Cut-off Current V = -60V, I = 0 -50 μA CEO CE B I Collector Cut-off Current V = -100V, V = 0 -10 μA CES CE BE I Emitter Cut-off Current V = -5V, I = 0 -0.5 mA EBO BE C h * DC Current Gain V = -4V, I = -0.3A 30 FE CE C V = -4V, I = -3A 15 75 CE C V (sat) * Collector-Emitter Saturation Voltage I = -6A, I = -600mA -1.5 V CE C B V (on) * Base-Emitter ON Voltage V = -6A, I = -4A -2 V BE CE C f Current Gain Bandwidth Product V = -10V, I = -500mA 3 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A2, June 2001
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