MJD32CT4 ,COMPLEMENTARY SILICON POWER TRANSISTORSMJD31B/31CMJD32B/32C®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPE ..
MJD32CT4-A ,Low voltage PNP power transistorFeatures■ This device is qualified for automotive TABapplication■ Surface-mounting TO-252 power pac ..
MJD32CTF ,PNP Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
MJD32CTF ,PNP Epitaxial Silicon TransistorMJD32/32CMJD32/32CGeneral Purpose Amplifier Low Speed Switching
MJD32CTF ,PNP Epitaxial Silicon TransistorApplications D-PAK for Surface Mount
MJD32RL ,Complementary Power TransistorsMAXIMUM RATINGS CASE 369CJ3xx21STYLE 1Rating Symbol Max Unit3Collector−Emitter Voltage V VdcCEO40MJ ..
MM74HC126SJX ,3-STATE Quad BuffersMM74HC125/MM74HC126 3-STATE Quad BuffersSeptember 1983Revised January 2005MM74HC125/MM74HC1263-STAT ..
MM74HC132M ,Quad 2-Input NAND Schmitt TriggerFeaturesThe MM74HC132 utilizes advanced silicon-gate CMOS
MJD31CT4-MJD32CT4
COMPLEMENTARY SILICON POWER TRANSISTORS
MJD31B/31C
MJD32B/32CCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED
SALESTYPES SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP31B/C AND
TIP32B/C
APPLICATIONS GENERAL PURPOSE SWITCHING AND
AMPLIFIER TRANSISTORS
DESCRIPTION The MJD31B and MJD31C and the MJD32B and
MJD32C form complementary NPN-PNP pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
May 1999
ABSOLUTE MAXIMUM RATINGS For PNP types the values are intented negative.
1/5
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle ≤ 2 %
For PNP type voltage and current values are negative.
Safe Operating Area Derating Curves
MJD31B/31C - MJD32B/32C2/5
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (PNP type)
Collector-Base Capacitance (PNP type)
MJD31B/31C - MJD32B/32C3/5
MJD31B/31C - MJD32B/32C4/5
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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http://
MJD31B/31C - MJD32B/32C5/5
:
www.ic-phoenix.com
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