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MJD29CFAIRCHILN/a25200avaiNPN Epitaxial Silicon Transistor


MJD29C ,NPN Epitaxial Silicon TransistorApplications • Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
MJD30 ,PNP Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
MJD3055 ,COMPLEMENTARY SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
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MJD3055T4 ,Power 10A 60V Discrete NPN2MJD2955 (PNP) MJD3055 (NPN)TYPICAL CHARACTERISTICST TA C2.5 252 20TC1.5 15T A1 10SURFACE MOUNT0.5 ..
MJD31 ,SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTSMAXIMUM RATINGS CASE 369CJ3xx21STYLE 1Rating Symbol Max Unit3Collector−Emitter Voltage V VdcCEO40MJ ..
MM74HC123AMX ,Dual Retriggerable Monostable MultivibratorFeaturesThe MM74HC123A high speed monostable multivibrators

MJD29C
NPN Epitaxial Silicon Transistor
MJD29/29C MJD29/29C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP29 and TIP29C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : MJD29 40 V : MJD29C 100 V V Collector-Emitter Voltage CEO : MJD29 40 V : MJD29C 100 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 1 A C I Collector Current (Pulse) 3 A CP I Base Current 0.4 A B P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (T =25°C) 1.56 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) *Collector-Emitter Sustaining Voltage CEO : MJD29 I = 30mA, I = 0 40 V C B : MJD29C 100 V I Collector Cut-off Current CEO : MJD29 V = 40V, I = 0 50 μA CE B : MJD29C V = 60V, I = 0 50 μA CE B I Collector Cut-off Current CES : MJD29 V = 40V, V = 0 20 μA CE BE : MJD29C V = 100V, V = 0 20 μA CE BE I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO BE C h *DC Current Gain V = 4V, I = 0.2A 40 FE CE C V = 4V, I = 1A 15 75 CE C V (sat) *Collector-Emitter Saturation Voltage I = 1A, I = 125mA 0.7 V CE C B V (on) *Base-Emitter ON Voltage V = 4A, I = 1A 1.3 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 200mA 3 MHz T CE C * Pulse Test: PW ≤ 300μs, Duty Cycle ≤ 2% ©2001 Rev. A2, June 2001
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