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Partno	Mfg	Dc	Qty	Available	Descript
MJD148	ON	N/a	55	avai	NPN Silicon Power Transistor
MJD148T4	MOTOROLA	N/a	706	avai	NPN Silicon Power Transistor

MJD148T4 ,NPN Silicon Power TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎCharacteristic Test Conditions Symbol ..
MJD18002D2 ,Bipolar NPN TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CÎÎÎCharacteristic Symbol Min Typ Max U ..
MJD200 ,Complementary Plastic Power Transistors NPNMaximum ratings applied to the device are individual stress limitvalues (not normal operating condi ..
MJD200RL ,Complementary Plastic Power Transistors NPNELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJD200RLG , Complementary Plastic Power Transistors
MJD200T4 ,SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS2MJD200 (NPN) MJD210 (PNP)T TA C2.5 25VCC+
30 V2 20 25 sR+11 VC0 SCOPER1.5 15B−
9 VDT (SURFACE MOU ..
MM74HC08MTC ,Quad 2-Input AND GateElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −40 to 125°CA A A VSymbol Parameter ..
MM74HC08MTCX ,Quad 2-Input AND GateElectrical Characteristics V = 5V, T = 25°C, C = 15 pF, t = t = 6 nsCC A L r f GuaranteedSymbol Par ..
MM74HC08MTCX ,Quad 2-Input AND GateElectrical Characteristics V = 5V, T = 25°C, C = 15 pF, t = t = 6 nsCC A L r f GuaranteedSymbol Par ..
MM74HC08MX ,Quad 2-Input AND GateMM74HC08 Quad 2-Input AND GateSeptember 1983Revised January 2005MM74HC08Quad 2-Input AND Gate
MM74HC08N ,Quad 2-Input AND GateMM74HC08 Quad 2-Input AND GateSeptember 1983Revised January 2005MM74HC08Quad 2-Input AND Gate
MM74HC08SJX , Quad 2-Input AND Gate

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MJD148-MJD148T4
NPN Silicon Power Transistor
MJD148
NPN Silicon Power
Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications. High Gain − 50 Min @ IC = 2.0 A Low Saturation Voltage − 0.5 V @ IC = 2.0 A High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @
IC = 250 mAdc Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B; >8000 V
Machine Model, C; >400 V
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