MJD117TF ,PNP Silicon Darlington TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
MJD122 ,PNP Silicon Darlington TransistorABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitNPN MJD122PNP MJD127V Collector-Base Voltage (I ..
MJD122 ,PNP Silicon Darlington TransistorELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJD122 ,PNP Silicon Darlington TransistorMJD122-1 / MJD122T4MJD127-1 / MJD127T4COMPLEMENTARY POWERDARLINGTON TRANSISTORSOrdering Marking Pac ..
MJD127 ,PNP Silicon Darlington Transistor3I μ, COLLECTOR CURRENT ( A) V, VOLTAGE (VOLTS) h , DC CURRENT GAINCFEh , SMALL−SIGNAL CURRENT GAIN ..
MJD127 ,PNP Silicon Darlington Transistor
MM74HC04MX_NL ,Hex InverterElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −55 to 125°CA A A Symbol Parameter C ..
MM74HC04N ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC04SJ ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC04SJX ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC08 ,Quad 2-Input AND Gate
MM74HC08M ,Quad 2-Input AND GateMM74HC08 Quad 2-Input AND GateSeptember 1983Revised January 2005MM74HC08Quad 2-Input AND Gate
MJD117TF
PNP Silicon Darlington Transistor
MJD117 MJD117 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) D-PAK I-PAK 11 • Electrically Similar to Popular TIP117 1.Base 2.Collector 3.Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit C Symbol Parameter Value Units V Collector-Base Voltage - 100 V CBO V Collector-Emitter Voltage - 100 V CEO B V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 2 A C I Collector Current (Pulse) - 4 A CP I Base Current - 50 mA B R1 R2 P Collector Dissipation (T =25°C) 20 W C C E R11 ≅ 0kΩ Collector Dissipation (T =25°C) 1.75 W a R20 ≅ .6kΩ T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) *Collector-Emitter Sustaining Voltage I = - 30mA, I = 0 - 100 V CEO C B I Collector Cut-off Current V = - 50V, I = 0 - 20 μA CEO CE B I Collector Cut-off Current V = - 100V, I = 0 - 20 μA CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 2 mA EBO EB C h *DC Current Gain V = - 3V, V = - 0.5A 500 FE CE EB V = - 3V, V = - 2A 1000 12K CE EB V = - 3V, I = - 4A 200 CE C V - 2 V (sat) *Collector-Emitter Saturation Voltage I = -2A, I = - 8mA CE C B I = - 4A, I = - 40mA - 3 V C B V (sat) *Base-Emitter Saturation Voltage I = - 4A, I = - 40mA - 4 V BE C B V (on) *Base-Emitter ON Voltage V = - 3A, I = - 2A - 2.8 V BE CE C f Current Gain Bandwidth Product V = -10V, I = - 0.75A 25 MHz T CE C C Output Capacitance V = - 10V, I = 0 200 pF ob CB E f= 0.1MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A2, June 2001
