Partno |
Mfg |
Dc |
Qty |
Available | Descript |
MJD112G |
ON|ON Semiconductor |
N/a |
25200 |
|
Complementary Darlington Power Transistors |
MJD112-RTF/E5 ON
MJD112G , Complementary Darlington Power Transistors
MJD112T4 ,COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSMJD112MJD117®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERREDSALEST ..
MJD112T4 ,COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSMJD112MJD117®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERREDSALEST ..
MJD112T4 ,COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSMAXIMUM RATINGS3Rating Symbol Max UnitCollector−Emitter Voltage V 100 VdcCEO4Collector−Base Voltage ..
MJD112T4G , Complementary Darlington Power Transistors
MM74HC02N ,Quad 2-Input NOR GateMM74HC02 Quad 2-Input NOR GateSeptember 1983Revised January 2005MM74HC02Quad 2-Input NOR Gate
MM74HC04M ,Hex InverterMM74HC04 Hex InverterSeptember 1983Revised January 2005MM74HC04Hex Inverter
MM74HC04MTCX ,Hex InverterElectrical Characteristics (Note 4)T = 25°CT = −40 to 85°CT = −55 to 125°CA A A Symbol Parameter C ..