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Partno	Mfg	Dc	Qty	Available	Descript
MJB41C	ON	N/a	1600	avai	Complementary Silicon Plastic Power Transistors
MJB42C	ON	N/a	814	avai	Complementary Silicon Plastic Power Transistors
MJB42CT4	MOT	N/a	10	avai	Complementary Silicon Plastic Power Transistors

MJB41C ,Complementary Silicon Plastic Power Transistors2P , POWER DISSIPATION (WATTS)Dt, TIME μ (s)MJB41C (NPN), MJB42C (PNP)1.00.7D = 0.50.50.3 0.20.2 ..
MJB42C ,Complementary Silicon Plastic Power Transistors3t, TIME μ (s)I , COLLECTOR CURRENT (AMP)Cr(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)C, CAPAC ..
MJB42CT4 ,Complementary Silicon Plastic Power TransistorsELECTRICAL CHARACTERISTICS (T = 25
C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJB44H11 ,Complementary Power TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MJB44H11T4 ,Low voltage NPN power transistor3I , COLLECTOR CURRENT (AMPS)r(t), TRANSIENT THERMALCRESISTANCE (NORMALIZED)P , POWER DISSIPATION ( ..
MJB45H11 ,Complementary Power Transistors2MJB44H11 (NPN), MJB45H11 (PNP)1.00.7D = 0.50.50.30.20.20.10.1P(pk)Z = r(t) Rθ θJC(t) JC0.050.07R = ..
MM74HC00SJX ,Quad 2-Input NAND GateElectrical Characteristics V = 5V, T = 25°C, C = 15 pF, t = t = 6 nsCC A L r f GuaranteedSymbol Par ..
MM74HC00SJX ,Quad 2-Input NAND GateFeaturesThe MM74HC00 NAND gates utilize advanced silicon-gate

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MJB41C-MJB42C-MJB42CT4
Complementary Silicon Plastic Power Transistors
MJB41C (NPN), MJB42C
(PNP)
Preferred Devices
Complementary Silicon
Plastic Power T ransistors2 PAK for Surface Mount Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix) Lead Formed Version in 16 mm Tape & Reel (“T4” Suffix) Electrically the Same as TIP41 and T1P42 Series
MAXIMUM RATINGS
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ÎÎÎ IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 � When surface mounted to an FR–4 board using the minimum recommended
pad size.

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