MJ15021 ,Complementary Silicon Power TransistorsELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJ15024 ,Silicon N-P-N epitaxial-base high power transistor.ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJ15024G , Silicon Power Transistors
MJ15025 ,POWER TRANSISTOR(16A,200-250V,250W)ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJ15027 , PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
MJ16012 ,5 A SwitchMax II power transistor. High voltage N-P-N type.THERMAL CHARACTERISTICSÎÎÎÎCharacteristic Symbol Max UnitCASE 340F–03ÎÎThermal Resistance, Junction ..
MM74C922WM ,16-Key EncoderMM74C922 • MM74C923 16-Key Encoder 20-Key EncoderOctober 1987Revised April 2001MM74C922 MM74C92 ..
MM74C922WMX ,16-Key EncoderMM74C922 • MM74C923 16-Key Encoder 20-Key EncoderOctober 1987Revised April 2001MM74C922 MM74C92 ..
MM74C923N ,20-Key EncoderMM74C922 • MM74C923 16-Key Encoder 20-Key EncoderOctober 1987Revised April 2001MM74C922 MM74C92 ..
MM74C923WM ,20-Key EncoderMM74C922 • MM74C923 16-Key Encoder 20-Key EncoderOctober 1987Revised April 2001MM74C922 MM74C92 ..
MM74C925N ,4-Digit Counters with Multiplexed 7-Segment Output DriversMM74C925 • MM74C926 4-Digit Counters with Multiplexed 7-Segment Output DriversOctober 1987Revised J ..
MM74C926N ,4-Digit Counters with Multiplexed 7-Segment Output DriversFunctional DescriptionReset — Asynchronous, active high Segment Output — Current sourcing with 40 ..
MJ15021
Complementary Silicon Power Transistors
Complementary Silicon Power
Transistors.. designed for use as high frequency drivers in Audio Amplifiers. High Gain Complementary Silicon Power Transistors Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec. Excellent Frequency Response —
fT = 20 MHz min.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
TC, CASE TEMPERATURE ( °C) 25 75
POWER DERA
TING F
ACT
OR (%)
175 200 100 150
Figure 1. Power Derating
*ON Semiconductor Preferred Device
