MJ11017 ,POWER TRANSISTORS(15A,150-250V,175W)Order this document**by MJ11017/DSEMICONDUCTOR TECHNICAL DATA* **" * ** **!** **. . . designed for ..
MJ11020 , NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)
MJ11028 ,POWER TRANSISTOR(50A,60-120V,300W)2(NPN) MJ11028, MJ11030, MJ11032 (PNP) MJ11029, MJ11033100There are two limitations on the power−ha ..
MJ11032 ,POWER TRANSISTOR(50A,60-120V,300W)
MJ11033 ,POWER TRANSISTOR(50A,60-120V,300W)ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MJ11033G , High−Current Complementary Silicon Power Transistors
MM74C85N ,4-Bit Magnitude ComparatorFeaturesThe MM74C85 is a four-bit magnitude comparator which
MJ11017
POWER TRANSISTORS(15A,150-250V,175W)
" ! .. designed for use as general purpose amplifiers, low frequency switching and
motor control applications. High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types) Collector–Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) – MJ11018, 17
VCEO(sus) = 250 Vdc (Min) – MJ11022, 21 Low Collector–Emitter Saturation
VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A
VCE(sat) = 1.8 V (Typ) @ IC = 10 A Monolithic Construction 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.
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(1) Pulse Test: Pulse Width 5.0 ms, Duty Cycle 10%.
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C) 75 100 125 200
, POWER DISSIP
TION (W
TTS)
100 150 175250
