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Partno	Mfg	Dc	Qty	Available	Descript
MJ11013	ON	N/a	5	avai	Leaded Power Transistor Darlington

MJ11013 ,Leaded Power Transistor DarlingtonTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitÎÎÎÎCASE 1–07Thermal Resistance, Junction to C ..
MJ11015 ,Leaded Power Transistor DarlingtonTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitÎÎÎThermal Resistance, Junction to Case R 0.87 ..
MJ11016 ,Leaded Power Transistor DarlingtonELECTRICAL CHARACTERISTICS (T = 25
C unless otherwise noted.)CCharacteristics Symbol Min Max UnitOF ..
MJ11017 ,POWER TRANSISTORS(15A,150-250V,175W)Order this document**by MJ11017/DSEMICONDUCTOR TECHNICAL DATA* **" * ** **!** **. . . designed for ..
MJ11020 , NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)
MJ11028 ,POWER TRANSISTOR(50A,60-120V,300W)2(NPN) MJ11028, MJ11030, MJ11032 (PNP) MJ11029, MJ11033100There are two limitations on the power−ha ..
MM74C74M ,Dual D Flip-FlopMM74C74 Dual D-Type Flip-FlopOctober 1987Revised May 2002MM74C74Dual D-Type Flip-Flop
MM74C74N ,Dual D Flip-FlopFeaturesThe MM74C74 dual D-type flip-flop is a monolithic comple-

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MJ11013
Leaded Power Transistor Darlington
%""$ !$"&"##$ "#.. for use as output devices in complementary general purpose amplifier applica-
tions. High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc Monolithic Construction with Built–in Base Emitter Shunt Resistor Junction Temperature to +200C
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Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
PNP
MJ11013
MJ11015
BASE
EMITTER
COLLECTOR
NPN
MJ11012
MJ11014
MJ11016
*Motorola Preferred Device

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