MIG75Q202H ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter, brake power circuits & control circuits (IGBT drive units, pr ..
MIG75Q7CSB1X ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter, brake power circuits and control circuits (IGBT drive units, ..
MINISMDE190F-2 , PolySwitch Resettable Devices Strap Battery Devices
MINISMDE190F-2 , PolySwitch Resettable Devices Strap Battery Devices
MIP0100SY ,IPDBlock DiagramAuto-restart Drain pinControl pin Shutdown/Auto-restartAuto-restart current-sourcePowe ..
MIP0101SY ,IPDapplications or general electronic equipment (such as office equipment, communications equipment, m ..
MM3Z6V8T1 ,Zener Voltage Regulator DiodeFeatures: 1 2Cathode Anode• Standard Zener Breakdown Voltage Range − 2.4 V to 75 V• Steady State Po ..
MM3Z6V8T1G ,Zener Voltage Regulator DiodeFeatures: 1 2Cathode Anode• Standard Zener Breakdown Voltage Range − 2.4 V to 75 V• Steady State Po ..
MM3Z75VT1G ,Zener Voltage Regulators3MM3Z2V4T1 SERIESTYPICAL CHARACTERISTICS1000 1000T = 25°CJI = 0.1 IZ(AC) Z(DC)f = 1 kHz100 100I = 1 ..
MM3Z7V5 ,Zener Voltage Regulator DiodeElectrical Characteristics table on page 3 ofJunction and Storage T , T −65 to °Cthis data sheet.J ..
MM3Z7V5B ,7.5V 200mW 2% Zener, SOD323FMM3Z2V4B-MM3Z75VB — Zener DiodesOctober 2010MM3Z2V4B-MM3Z75VBZener Diodes
MM3Z7V5B ,7.5V 200mW 2% Zener, SOD323FFeatures• Wide Zener Voltage Range Selection, 2.4V to 75V• VZ Tolerance Selection of ±2% (B Series) ..
MIG75Q202H
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
MIG75Q202H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG75Q202H High Power Switching Applications
Motor Control Applications Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units
for over-current, realtime-current-control (RTC), under-voltage & over-temperature) in one
package. The electrodes are isolated from case. High speed type IGBT : VCE (sat) = 3.5 V (Max)
toff = 2.8 µs (Max)
trr = 0.21 µs (Max) Package dimensions : TOSHIBA 2-110A1A Weight : 520g
Equivalent Circuit
