MIG15Q806H ,N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)TOSHIBA MlG15Q806H/HAMIG1 5Q806H, MIG1 5Q806HAO Integrates Inverter, Converter Power Circuits and T ..
MIG200J201H ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter, brake power circuits & control circuits (IGBT drive units, pr ..
MIG200J6CMB1W ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter and control circuits (IGBT drive units, and units for protect ..
MIG200Q101H ,Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control ApplicationsApplications Integrates inverter power circuits & control circuits (IGBT drive units, protectio ..
MIG20J103H ,N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)MIG20J103H0 Intelligent Power Module that include IGBT drive circuits, overcurrent, undervoltage lo ..
MIG20J501L ,MIG20J501LFEATURES (1) Maximum Rating V 600 V, I 20 A CES C(2) Control IC High voltage IC 3 low vo ..
MM3Z4V7ST1G ,Zener Voltage Regulator DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA for all typ ..
MM3Z4V7T1 ,Zener Voltage Regulator DiodeFeatures: 1 2Cathode Anode• Standard Zener Breakdown Voltage Range − 2.4 V to 75 V• Steady State Po ..
MM3Z4V7T1G ,Zener Voltage Regulator DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA for all typ ..
MM3Z4V7T1G ,Zener Voltage Regulator DiodeFeatures: 1 2Cathode Anode• Standard Zener Breakdown Voltage Range − 2.4 V to 75 V• Steady State Po ..
MM3Z51VB ,51.0V 200mW 2% Zener, SOD323FFeatures• Wide Zener Voltage Range Selection, 2.4V to 75V• VZ Tolerance Selection of ±2% (B Series) ..
MM3Z51VT1G ,Zener Voltage RegulatorsMAXIMUM RATINGS†For information on tape and reel specifications,including part orientation and tape ..
MIG15Q806H
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
TOSHIBA MIG15Q806H/HA
TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT
hhllltyil 5Q806H, hhlKii1l 5Q806HA
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
0 Integrates Inverter, Converter Power Circuits and Thermistor in One Package.
0 Output (Inverter Stage) : 3/ 15 A/ 1200V IGBT
0 Input (Converter Stage) : 3/ 15A/1600V Silicon Rectifier
0 The Electrodes are Isolated from Case.
0 Weight : 190 g
It Outline
MIG15Q806H : 2-108E5A
MIG15Q806HA : 2-108E6A
EQUIVALENT CIRCUIT
3o-' 5o-' 7o-' 1 2
Ro- BO 4 6 8
SC U V W
1! 1: 7: 120 9o-I loo-' 11o-'
cy c . . . . . . 013
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1999-06-03 1/8
TOSHIBA MIG15Q806H/HA
Package Dimension Unit: mm
MIG15Q806H 80t0.8
22.86105 19.05t0. x3.81=15.24
11.43t0. 6.8t0.8
3.81:0.5 7.52:0.5 W6.0t0.5 . - .
IO11I213
a'. '". m. a
'i', 'i', a g; t. r ii'
R 'e. z It +l - L -- R
Q 8 t2' si . :
155:0.8
1,15h0.2x1.0h0.2
a'.''', g o,uA,l,A4,A4, j)'--,,,,,,,
c, O I I I I I I ' _-
g tl a I E E
'i re' N I .5
105:0.5
2-108E5A
Unit: mm
MIG15Q806HA
80h0.8
19.05h0.
11.43t0.
x3.81=15.24
3.81:0.5 16210.5
¢6.0t0.5
78 9|011I213
45.0 1' 0.8
15.24 t 0.5
19.24: 0.8
11.43t0.5
107.2*
1.15-+0.2x1.0*0.2
co on ut I .-
o' o- o yum. j, j), j, I , , g. y
+I Il Fl I Fl M
Ct O o. In
K tvt' N I u;
.- '- , F
105t0.5
2-108E6A
1999-06-03 2/8
TOSHIBA MIG15Q806H/HA
MAXIMUM RATINGS (Ta = 25°C)
STAGE CHARACTERISTIC SYMBOL RATING UNIT
Colleetor-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES i20 V
DC IC 25 / 15 A (25°C / 80°C)
Inverter Co eetor Current 1 ms ICP 50/30 A (25t/80t)
F d C t DC IF 15 A
orwar urren 1 ms IFM 30 A
Collector Power Dissipation
(Tc = 25°C) PC 145 W
Repetitive Peak Reverse Voltage VRRM 1600 V
Average Output Rectified Current I0 15 A
Converter
Peak One Cycle Surge Forward I 250 A
Current (50 Hz, Non-Repetitive) FSM
Junction Temperature Tj 150 'C
Storage Temperature Range Tstg -40--125 T
Module . 2500
Isolation Voltage V1301 (AC 1 minute) V
Screw Torque - 6 Nan
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
a. Inverter stage
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGES VGE = i20 V, VCE = 0 - - i500 nA
Collector Cut-Off Current ICES VCE = 1200 V, VGE = 0 - - 0.5 mA
Gate-Emitter Cut-Off Voltage VGE (off) 1C = 15 mA, VCE = 5V - 6.0 - V
Collector-Emitter Saturation V IC = 15A Tj = 25°C - 2.8 3.2 V
Voltage CE (sat) VGE = 15 V Tj = 125°C - 3.1 3.7
. . VCE = 10V, VGE = 0,
Input Capacitance Cies f = 1 MHz - 1850 - pF
Rise Time tr VCC = 600V - 0.07 0.15
Switching Turn-On Time ton IC = 15A - 0.15 0.30
. . VGE = i15V #s
Time Fall Time tf RG = 82 f) - 0.07 0.10
Turn-Off Time toff Tj = 125°C (Note 1) - 0.60 0.90
Forward Voltage VF IF = 15 A, VGE = 0 - 2.0 2.8 V
. IF--15A,VGE=-10V,
Reverse Recovery Time trr di / dt = 200 A /prss - 0.10 0.25 ,us
. Transistor - - 0.86 0
Thermal Resistance Rth (i-e) Diode - - 1.5 C/W
06-03 3/8
TOSHIBA MIG15Q806H/HA
b. Converter stage
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Repetitive Peak Reverse
I = 1 - - A
Current RRM VRRM 600 V 50 '
Peak Forward Voltage VFM IFM = 15 A - 1.05 1.20 V
Peak One Cycle Surge Forward .
Curren t IFSM 50 Hz sine-half-wave 250 - - A
Thermal Resistance Rth (i-e) - - - 1.90 °C/W
c. Thermistor
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Zero-Power Resistance R25 ITM = 0.2 mA, Te = 25°C 17.31 20 23.14 kn
B Value B25/85 Te = 25°C/Tc = 85°C - 3760 - K
(Note 1) : Switching Time Test Circuit & Timing Chart
1999-06-03 4/8
TOSHIBA
MIG15Q806H/HA
a. Inverter stage
IC - VCE
A COMMON 1'5 v
s, EMITTER
S? Tc=25°C /12V 10V
9 20 /
E 20 v / /
2 10 l
8 VGE = 8 v -
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
Tc = 25°C
COLLECTOR-EMITTER VOLTAGE VCE
0 4 8 12 16 20
GATE_EMITTER VOLTAGE VGE (V)
VCE - VGE
COMMON
EMITTER
Te = -40''C
COLLECTOR-EMITTER VOLTAGE VCE (V)
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
10 (A)
CO LLECTOR CURRENT
COLLECTOR—EMIT’I‘ER VOLTAGE VCE (V)
COLLECTOR CURRENT 10 (A)
1C - VCE
COMMON 15 V
EMITTER 18 v
Tc = 125°C 12 V
0 2 4 6 8 10
C0LLECT0WEMiTTEIt VOLTAGE VCE (V)
VCE - VGE
COMMON
EMITTER
To = 125°C
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
IC - VCE
30 I 1 1
COMMON 40°33 25''C
EMITTER
VCE = 5 V
f Te = 125°C
0 4/27
0 4 8 12 16 20
GATE-EMITTER VOLTAGE VGE (V)
1999-06-03 5/8
TOSHIBA
SWITCHING TIME (#5)
SWITCHING LOSS (mJ)
SWITCHING TIME - IC
COMMON EMITTER
VCC = 600 V
VGE = i 15 V
RG = 82 n
- : Te = 25°C
--- ..Te= 125°C
10 100
COLLECTOR-CURRENT IC (A)
SWITCHING LOSS - IC
COMMON EMITTER
VCC = 600 V
VGE = f: 15 V
RG = 82 Q
'. Tc = 125''C
10 100
COLLECTOR-CURRENT IC (A)
SWITCHING TIME (/15)
SWITCHING LOSS (mJ)
MIG15Q806H/HA
SWITCHING TIME - RG
COMMON EMITTER
VCC = 600 V
VGE = il5V
Ic = 15A
- .' Te = 25''C
--- :Tc=125°C
10 100 1000
GATE RESISTANCE RG (Q)
SWITCHING LOSS - RG
COMMON EMITTER
Vcc = 600 V
VGE = i 15 V
IC = 15A
- : Te = 25°C
- :Tc= 125°C
‘10 100 1000
GATE RESISTANCE RG (Q)
1999-06-03 6/8
TOSHIBA MIG15Q806H/HA
C - VCE VCE, VGE - QG
A g a:
li, 1 Y A G
Ed > if,
o ti - s
a: E 8 >
O ??c9 pd
a t; E
2: 1 5 ii
'4 a':
Cres ©
COMMON EMITTER 0 40 80 120 160
VG = 0
f Pf MHz
10 Te = 25°C CHARGE QG (nC)
1 10 100 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
Ci I Ed I
30 IF - VF 2 trr, rr, SW - F
I £3 'c
E M mm
Fe 20 33533
z // 0E8
L1: My.,
g 'l yet;
0 125°C 'r,it3it, trr
r: 000
pt IO l saw
it cam“: COMMON CATHODE
a: Tc = 25''C M rs: VCC = 600 V
o l 2'53
Ly -40oC 3mm V.GE =_c,,1fly
)f COMMON CATHODE 'ttiii di/dt -_2T°:’f;g%
ttt . -
0 A VGE--OV 3 I', ---:Tc--125T
0 1 2 3 4 5 Ci o 10 20
FORWARD VOLTAGE " (V) FORWARD CURRENT IF (A)
SHORT CIRCUIT SOA
Rth(t) - tw
w, g 100
h' 1 w
0:3 ttt
E V ttt
g ' 0.1 ii
: j VCC = 900 V
< 8 tw = 10 ps
i', VGE = :15v
c; 0 01 Tc = 25°C 1 Tj = 125 C
F 0.001 0.01 0.1 1 10 0 200 400 600 800 1000 1200 1400
PULSE WIDTH tw (s) COLLECTOR-EMITTER VOLTAGE VCE (V)
1999-06-03 7/8
TOSHIBA MIG15Q806H/HA
REVERSE BIAS SOA
1c (A)
COLLECTOR CURRENT
Tj s 125°C
VGE = :15v
1 RG = 82 n
200 400 600 800 1000 1200 1400
COLLECTOR-EMITTER VOLTAGE VCE (V)
b. Converter stage
1F - VF Rth (t) - tw
COMMON CATHODE 8
F F "s.
D a "sie",
0 125°C Te = 25°C g =
Cl - IE,
ttd n:
F Tc = 25''C
'0.001 0.01 0.1 1 10
0 0.5 1 1.5 2
PULSE WIDTH tw (s)
FORWARD VOLTAGE VF (V)
1999-06-03 8/8
www.ic-phoenix.com
.
