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MHPA18010FREESCAN/a10avaiMHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier


MHPA18010 ,MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier    Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MHPA180 ..
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MHPA18010
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
The RF Line
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Designed for Class AB amplifier applications in 50 ohm systems operating in
the 1800 to 1900 MHz frequency band. A silicon FET design provides
outstanding linearity and gain. In addition, the excellent group delay and phase
linearity characteristics are ideal for digital CDMA and GSM modulation
systems. Typical CDMA Performance: 1840 MHz, 28 Volts IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Adjacent Channel Power: –51 dBc @ 30 dBm Average Power, 885 kHz Channel Spacing Power Gain: 24.5 dB Min (@ f = 1840 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, VBIAS ≅ 8 V Set for Supply Current of 600 mA, TC = 25°C, 50 Ω System)
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