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MHL19936MOTN/a2avaiMHL19936 1900-2000 MHz, 12 W, 29 dB RF Linear LDMOS Amplifier


MHL19936 ,MHL19936 1900-2000 MHz, 12 W, 29 dB RF Linear LDMOS Amplifier  Order this documentSEMICONDUCTOR TECHNICAL DATAby MHL19936/DThe RF Line   ..
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MHL19936
MHL19936 1900-2000 MHz, 12 W, 29 dB RF Linear LDMOS Amplifier
The RF Line
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Designed for ultra–linear amplifier applications in 50 ohm systems operating in
the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA and
CDMA. Third Order Intercept: 49.5 dBm Typ Power Gain: 29 dB Typ (@ f = 1960 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25°C; 50 Ω System)
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